K. Lee

发表

Influence of controlled growth rate on tilt mosaic microstructures of nonpolar a-plane GaN epilayers grown on r-plane sapphire

Ah Hyun Park, E. Suh, T. Seo, 2012, Electronic Materials Letters.

Spatial stress distribution and optical properties of GaN films grown on convex shape-patterned sapphire substrate by metalorganic chemical vapor deposition

Ah Hyun Park, M. S. Jeong, E. Suh, 2011 .

Improved Strain-Free GaN Growth with a Nearly Lattice-Matched AlInN Interlayer by Metalorganic Chemical Vapor Deposition

Ah Hyun Park, E. Suh, T. Seo, 2010 .

Optical properties of InGaN/GaN MQW microdisk arrays on GaN/Si(111) template

E. Suh, K. Shim, K. Lim, 2008 .

Enhanced Light Output Power of GaN Light-Emitting Diodes with Graphene Film as a Transparent Conducting Electrode

Ah Hyun Park, Seung Jin Chae, E. Suh, 2011 .

Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallization

Ho Won Jang, Sung-Jin Son, Jong Kyu Kim, 2001 .

Observation of Whispering Gallery Modes in InGaN/GaN Multi-Quantum Well Microdisks with Ag Plasmonic Nanoparticles on Si Pedestals

D. A. Dinh, K. S. Hui, K. Hui, 2022, Journal of Electronic Materials.

Enhanced optical output power by the silver localized surface plasmon coupling through side facets of micro-hole patterned InGaN/GaN light-emitting diodes.

Ah Hyun Park, E. Suh, T. Cuong, 2014, Optics express.

Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster

Eun-Kyung Suh, Ah Hyun Park, Hyun Jeong, 2009 .

Al concentration control of epitaxial AlGaN alloys and interface control of GaN/AlGaN quantum well structures

Jong-hee Kim, G. Yang, K. Lim, 2000 .

Graphene network on indium tin oxide nanodot nodes for transparent and current spreading electrode in InGaN/GaN light emitting diode

Ah Hyun Park, E. Suh, V. Pham, 2011 .

Growth of GaN Epilayers on Defect-Selective Etched Nanoporous GaN Templates Generated by Electrochemical Etching

Ah Hyun Park, E. Suh, T. Seo, 2011 .

Investigation into the Role of Low-Temperature GaN in n-GaN/InGaN/p-GaN Double-Heterostructure Light-Emitting Diodes

T. Seong, D. Youn, S. Hwang, 2000 .

Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer

Kee Young Lim, K. Lim, Kang Jea Lee, 2004 .

Enhanced light output power of near UV light emitting diodes with graphene / indium tin oxide nanodot nodes for transparent and current spreading electrode.

Ah Hyun Park, Seung Jin Chae, E. Suh, 2011, Optics express.

Epitaxial growth of improved GaN epilayer on sapphire substrate with platinum nanocluster

E. Suh, T. Seo, Hyun Jeong, 2009 .

Growth of crack‐free GaN films on Si(111) substrate and improvement of the crystalline quality using SixNy inserting layer

G. Yang, Tae Ki Kim, K. Lim, 2005 .

Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrate

Ah Hyun Park, M. S. Jeong, E. Suh, 2011 .

Light outcoupling effect in GaN light-emitting diodes via convex microstructures monolithically fabricated on sapphire substrate.

Ah Hyun Park, M. S. Jeong, E. Suh, 2011, Optics express.

Effects of growth rate of a GaN buffer layer on the properties of GaN on a sapphire substrate

C. S. Oh, A. Yoshikawa, G. Yang, 1999 .

Large bandgap bowing of InxGa1–xN films and growth of blue/green InxGa1–xN/GaN MQWs on highly tensile strained GaN/Si(111) hetero structures

G. Yang, Tae Ki Kim, K. Lim, 2006 .