Yu Pan

Heteroepitaxy of semiconducting 2H-MoTe2 thin films on arbitrary surfaces for large-scale heterogeneous integration

Siheng Li, Aimin Wu, Yu Ye, 2022, Nature Synthesis.

Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer

Huaxiang Yin, Zhenhua Wu, Qingzhu Zhang, 2019, Nanotechnology.

The evolution of MoS2 properties under oxygen plasma treatment and its application in MoS2 based devices

H. Yin, Huilong Zhu, Jiahan Yu, 2019, Journal of Materials Science: Materials in Electronics.

Novel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

Tianchun Ye, Junfeng Li, H. Yin, 2019, IEEE Journal of the Electron Devices Society.

A First Principle Study of the Carrier mobility and Injection Velocity for Strained 2D materials MOSFETs

H. Yin, Wenwu Wang, Wen Yang, 2018, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

The optimization of contact interface between metal/MoS2 FETs by oxygen plasma treatment

H. Yin, Jiahan Yu, Hanmin Tian, 2020, Journal of Materials Science: Materials in Electronics.

Ab-Initio Simulations of Monolayer InSe and MoS2 Strain Effect: From Electron Mobility to Photoelectric Effect

H. Yin, Chao Zhao, Wen Yang, 2019, Journal of Electronic Materials.