Hideki Hasegawa

发表

Process Characterization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer

Seiya Kasai, Hiroshi Takahashi, Masatsugu Yamada, 2001 .

Toward Next Generation Electronics Based on Single Electron Devices

Hideki Hasegawa, 1997 .

Sensing terahertz signals with III-V quantum nanostructures

Hideki Hasegawa, Seiya Kasai, H. Hasegawa, 2003, SPIE OPTO.

Interactions between drifting carrier plasma waves and electromagnetic waves in the interdigital - gated n - AIGaAs / GaAs HEMT devices

Seiya Kasai, Hideki Hasegawa, Abdul Manaf Hashim, 2009 .

Application of wire sawing method to decommissioning of nuclear power plant. Cutting test with turbine pedestal of thermal power plant

Hideki Hasegawa, Yoshitaka Yamashita, Noriyuki Uchiyama, 1995 .

Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HEMTs Having a Silicon Interface Control Layer

Chao Jiang, Hideki Hasegawa, Hiroshi Takahashi, 2001 .

Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al~2O~3 Insulated Gate

Hideki Hasegawa, Tamotsu Hashizume, Shinya Ootomo, 2003 .

Invited Paper Characterization Of Interfaces Formed By Interrupted OMVPE Growth

Hideki Hasegawa, Hideo Ohno, Eiji Ikeda, 1987, Other Conferences.

UNDERSTANDING AND CONTROL OF INTERFACES FOR COMPOUND SEMICONDUCTOR VLSIs

Hideki Hasegawa, 1989 .

Application of wire sawing method to decommissioning of high level activated concrete

Hideki Hasegawa, Morishige Watanabe, Youichi Nishimura, 1999 .

Control Of Insulator-Semiconductor Interfaces Of InP And InGaAs For Surface Passivation And Misfet Fabrication

Hideki Hasegawa, H. Hasegawa, 1989, Other Conferences.

Analysis of Interconnection Delay on Very High-Speed LSI/VLSI Chips Using an MIS Microstrip Line Model

Hideki Hasegawa, S. Seki, 1984 .

Photoluminescence of fullerene thin films prepared at various substrate temperatures

Hideki Hasegawa, Keiichi Kaneto, 1997, Optics & Photonics.

Method and apparatus for assembling veneer strips

Hideki Hasegawa, Takayuki Yamauchi, Mikio Tsutsui, 2002 .

Not showing ones the wood for the trees

Hideki Hasegawa, 2001 .

Pinning-free GaAs MIS structures with Si interface control layers formed on (4 × 6) reconstructed (0 0 1) surface

Hideki Hasegawa, Sanguan Anantathanasarn, S. Anantathanasarn, 2003 .

Device interference in GaAs quantum wire transistors and its suppression by surface passivation using Si interface control layer

Seiya Kasai, Hideki Hasegawa, Rui Jia, 2006 .

GaAs Schottky wrap-gate binary-decision-diagram devices for realization of novel single electron logic architecture

Seiya Kasai, Hideki Hasegawa, Yoshihito Amemiya, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Mechanism of anomalous current transport in n-type GaN Schottky contacts

Hideki Hasegawa, H. Hasegawa, Susumu Oyama, 2002 .

Speed-Power Performances of Quantum Wire Switches Controlled by Nanometer-Scale Schottky Wrap Gates for GaAs based Hexagonal BDD Quantum LSIs

Seiya Kasai, Hideki Hasegawa, H. Hasegawa, 2005 .

Formation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates

Hideki Hasegawa, Isao Tamai, Taketomo Sato, 2004 .

Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future

Hideki Hasegawa, A. Domanowska, Masamichi Akazawa, 2010 .

Properties of Metal-Semiconductor Interfaces Formed on n-Type GaN

Hideki Hasegawa, Tamotsu Hashizume, Yuji Koyama, 1999 .

Effects of gap states on scanning tunneling spectra observed on (110)- and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy

Seiya Kasai, Hideki Hasegawa, Yasuhiko Ishikawa, 2000 .

Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces

Hideki Hasegawa, Hideo Ohno, H. Ohno, 1986 .

Structural and Optical Properties of InGaAs Ridge Quantum Wire Arrays with Sub-micron Pitches Grown by Selective MBE on InP Substrates.

Chao Jiang, Hideki Hasegawa, Tsutomu Muranaka, 2002 .

III–V nanoelectronics and related surface/interface issues

Hideki Hasegawa, H. Hasegawa, 2003 .

Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures

Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume, 2006 .

Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

Hideki Hasegawa, Tamotsu Hashizume, Shinya Ootomo, 2003 .

Large modulation of conductance in Interdigital-Gated HEMT devices due to surface plasma wave interactions

Seiya Kasai, Hideki Hasegawa, Abdul Manaf Hashim, 2005 .

Leakage mechanism in GaN and AlGaN Schottky interfaces

Hideki Hasegawa, Tamotsu Hashizume, Junji Kotani, 2004 .

MBE growth and applications of silicon interface control layers

Hideki Hasegawa, H. Hasegawa, 2000 .

Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model

Hideki Hasegawa, Tamotsu Hashizume, Junji Kotani, 2004 .

Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy

Hideki Hasegawa, Nanako Shiozaki, Taketomo Sato, 2005 .

Observation of first and third harmonic responses in two-dimensional AlGaAs/GaAs HEMT devices due to plasma wave interaction

Seiya Kasai, Hideki Hasegawa, Abdul Manaf Hashim, 2008 .

New anodic native oxide of GaAs with improved dielectric and interface properties

Hideki Hasegawa, Kevin E. Forward, H. L. Hartnagel, 1975 .

Fermi Level Pinning and Schottky Barrier Height Control at Metal-Semiconductor Interfaces of InP and Related Materials

Hideki Hasegawa, H. Hasegawa, 1999 .

Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process

Seiya Kasai, Hideki Hasegawa, Taketomo Sato, 2001 .

Gate control characteristics in GaAs nanometer-scale Schottky wrap gate structures

Seiya Kasai, Hideki Hasegawa, Miki Yumoto, 2002 .

Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires

Seiya Kasai, Hideki Hasegawa, 2001 .

Formation of 〈001〉-aligned nano-scale pores on (001) n-InP surfaces by photoelectrochemical anodization in HCl

Hideki Hasegawa, Chinami Kaneshiro, A. Hamamatsu, 1999 .

Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to 2DEG

Hideki Hasegawa, Hiroshi Okada, Tamotsu Hashizume, 1995 .

Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

Hideki Hasegawa, Eiichi Sano, Toshiki Makimoto, 2004 .

Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

Hideki Hasegawa, Tamotsu Hashizume, Shinya Ootomo, 2001 .

Hydrogen response of Pd Schottky diodes formed on AlGaN/GaN heterostructure

Hideki Hasegawa, Takeshi Kimura, Tamotsu Hashizume, 2005 .

Evolution mechanism of heterointerface cross-section during growth of GaAs ridge quantum wires by selective molecular beam epitaxy

Hideki Hasegawa, Isao Tamai, Taketomo Sato, 2004 .

Plasma wave interactions in the microwave to THz range between carriers in a semiconductor 2DEG and interdigital slow waves

Hideki Hasegawa, Abdul Manaf Hashim, Tamotsu Hashizume, 2003 .

Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

Hideki Hasegawa, Tamotsu Hashizume, Shinya Ootomo, 2003 .

Molecular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires

Hideki Hasegawa, Hiroshi Okada, H. Hasegawa, 1999 .

MICROSCOPIC UNDERSTANDING AND CONTROL OF SURFACES AND INTERFACES OF COMPOUND SEMICONDUCTORS FOR MESOSCOPIC DEVICES

Hideki Hasegawa, H. Hasegawa, 2000 .

Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

Hideki Hasegawa, Tamotsu Hashizume, Shinya Ootomo, 2003 .

X-Ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well

Hideki Hasegawa, Tamotsu Hashizume, Hiroshi Takahashi, 1999 .

GaAs and InGaAs single electron hexagonal nanowire circuits based on binary decision diagram logic architecture

Seiya Kasai, Hideki Hasegawa, 2002 .

Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process

Hans L. Hartnagel, Hideki Hasegawa, Tamotsu Hashizume, 1993 .

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

Naoki Kobayashi, Hideki Hasegawa, Takashi Fukui, 2018 .

Fabrication of GaAs-based integrated 2-bit half and full adders by novel hexagonal BDD quantum circuit approach

Seiya Kasai, Hideki Hasegawa, M. Yumoto, 2001 .

Graph-based quantum logic circuits and their realization by novel GaAs multiple quantum wire branch switches utilizing Schottky wrap gates

Seiya Kasai, Hideki Hasegawa, Miki Yumoto, 2002 .

Tunneling injection of electrons at nanometer-scale Schottky gate edge of AlGaN/GaN heterostructure transistors and its computer simulation

Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume, 2005 .

Molecular Beam Epitaxy Growth of High-Quality Linear Arrays of InGaAs Ridge Quantum Wires with Nanometer Wire Widths and Submicron Wire Pitches on Patterned InP Substrates

Chao Jiang, Hideki Hasegawa, H. Hasegawa, 2002 .

Effects of Si deposition on the properties of Ga-rich (4×6) GaAs (001) surfaces

Hideki Hasegawa, Sanguan Anantathanasarn, Noboru Negoro, 2003 .

Interface models and processing technologies for surface passivation and interface control in III–V semiconductor nanoelectronics

Hideki Hasegawa, Masamichi Akazawa, H. Hasegawa, 2008 .

COMPUTER SIMULATION AND EXPERIMENTAL CHARACTERIZATION OF SINGLE ELECTRON TRANSISTORS BASED ON SCHOTTKY WRAP GATE CONTROL OF 2DEG

Seiya Kasai, Hideki Hasegawa, Yoshihiro Satoh, 1998 .

InP MISFET's with Al 2 O 3 /Native Oxide double-layer gate insulators

Hideki Hasegawa, Hideo Ohno, Takayuki Sawada, 1984 .

Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy

Hideki Hasegawa, Takashi Fukui, Junichi Motohisa, 1995 .

Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP

Hideki Hasegawa, Tamotsu Hashizume, Mayumi B. Takeyama, 1999 .

Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

Hideki Hasegawa, Tamotsu Hashizume, Noboru Negoro, 2005 .

Gate Controlled Conductance Oscillations in GaAs Schottky Wrap-Gate Single Electron Transistors

Seiya Kasai, Hideki Hasegawa, 2001 .

Control of surfaces and heterointerfaces of AlGaN/GaN system for sensor devices and their on-chip integration on nanostructures

Hideki Hasegawa, H. Hasegawa, 2007 .

M.I.S. and Schottky slow-wave coplanar striplines on GaAs substrates

Hideki Hasegawa, H. Okizaki, H. Hasegawa, 1977 .

Side Gating Phenomenon in GaAs Quantum Wire Transistors

Seiya Kasai, Hideki Hasegawa, Rui Jia, 2003 .

Interface state band between GaAs and its anodic native oxide

Hideki Hasegawa, Takayuki Sawada, H. Hasegawa, 1979 .

Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates

Hideki Hasegawa, Isao Tamai, Taketomo Sato, 2005 .

Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition

Hideki Hasegawa, Tamotsu Hashizume, Ryuusuke Nakasaki, 2000 .

Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires.

Seiya Kasai, Hideki Hasegawa, Miki Yumoto, 2002 .

Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits

Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume, 2006 .

Surface plasma wave interactions between semiconductor and electromagnetic space harmonics from microwave to THz range

Hideki Hasegawa, Abdul Manaf Hashim, Kouichi Iizuka, 2004 .

Fabrication and characterization of GaAs single electron devices having single and multiple dots based on Schottky in-plane-gate and wrap-gate control of two-dimensional electron gas

Seiya Kasai, Hideki Hasegawa, Kei–ichiroh Jinushi, 1997 .

Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors

Naoki Kobayashi, Hideki Hasegawa, Takashi Fukui, 2007 .

Electrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures

Hideki Hasegawa, Taketomo Sato, H. Hasegawa, 2005 .

Current collapse transient behavior and its mechanism in submicron-gate AlGaN∕GaN heterostructure transistors

Hideki Hasegawa, Masamichi Akazawa, H. Hasegawa, 2009 .

Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process

Hideki Hasegawa, Takeshi Kimura, Tamotsu Hashizume, 2005 .

Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy

Chao Jiang, Hideki Hasegawa, Tsutomu Muranaka, 2001 .

Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates

Hideki Hasegawa, Hiroshi Okada, Tamotsu Hashizume, 1997 .

Current Transport, Fermi Level Pinning, and Transient Behavior of Group-III Nitride Schottky Barriers

Hideki Hasegawa, Masamichi Akazawa, H. Hasegawa, 2009 .

Self-Organized Quantum Dots

Hideki Hasegawa, Takashi Fukui, Toshiaki Tamamura, 1996 .

Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors

Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume, 2005 .

Design and Implementation of Ultra-Small-Size and Ultra-Low-Power Digital Systems on GaAs-based Hexagonal Nanowire Networks Utilizing a Hexagonal BDD Quantum Circuit Approach

Hideki Hasegawa, M. Yumoto, S. Kasai, 2004 .