U. Jain

发表

Energy of arrays of nonperiodic interacting dislocations in semiconductor strained epilayers: Implications for strain relaxation

R. Mertens, R. V. Overstraeten, S. Jain, 1993 .

Calculation of critical-layer-thickness and strain relaxation in GexSi1−x strained layers with interacting 60 and 90° dislocations

R. Mertens, J. Willis, R. V. Overstraeten, 1993 .

A physical basis for irradiation-induced modification of thin-film stresses

Amitabh Jain, U. Jain, A. Jain, 1995 .

THE GROWTH OF COLLOIDAL CENTRES IN IRRADIATED ALKALI HALIDES

A. B. Lidiard, U. Jain, 1976 .

Nucleation of dislocation loops in strained epitaxial layers

S. Jain, A. Harker, R. Bullough, 1995 .

Reduction of stresses in thin films by high energy ion beams

U. Jain, S. Loganathan, A. Jain, 1997 .

Toughening of thin films by high energy ion beams

U. Jain, S. Loganathan, A. Jain, 1996, Proceedings of 11th International Conference on Ion Implantation Technology.

Critical thickness and strain relaxation in lattice mismatched II–VI semiconductor layers

Magnus Willander, Uma Jain, Herman Maes, 1998 .

Effect of Electrode Geometry on Sensor Response

A. Stoneham, A. Harker, U. Jain, 1990 .

Determination of the minority carrier lifetime in the base of a back-surface field solar cell by forward current-induced voltage decay and photovoltage decay methods

S. Jain, R. Muralidharan, U. Jain, 1982 .

Characterization of CMOS Image Sensor

U. Jain, U. Jain, 2016 .