Gunrae Kim

New insights into 10nm FinFET BTI and its variation considering the local layout effects

Taiki Uemura, Sangwoo Pae, Minjung Jin, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack

Yoohwan Kim, Minjung Jin, Jinju Kim, 2018, Microelectron. Reliab..

Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance

Taiki Uemura, Soonyoung Lee, Sangwoo Pae, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Soft-Error Susceptibility in Flip-Flop in EUV 7 nm Bulk-FinFET Technology

Taiki Uemura, Jeongmin Jo, Gunrae Kim, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Development of thermal neutron SER-resilient high-k/metal gate technology

Sangwoo Pae, Kyungsik Park, Jongsun Bae, 2014, 2014 IEEE International Reliability Physics Symposium.