A. Saxler

SiC and GaN Based Transistor and Circuit Advances

John W. Palmour, J. Milligan, Jason Henning, 2004 .

Field-plated GaN HEMTs and amplifiers

Y.-F. Wu, A. Saxler, U.K. Mishra, 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..

8-watt GaN HEMTs at millimeter-wave frequencies

Y.-F. Wu, P. Parikh, A. Saxler, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Type-II superlattice photodetector on a compliant GaAs substrate

F. Szmulowicz, A. Saxler, W. Hwang, 2000, IEEE Photonics Technology Letters.

3.5-watt AlGaN/GaN HEMTs and amplifiers at 35 GHz

Y.-F. Wu, P. Parikh, A. Saxler, 2003, IEEE International Electron Devices Meeting 2003.

40-W/mm Double Field-plated GaN HEMTs

P. Parikh, A. Saxler, M. Moore, 2006, 2006 64th Device Research Conference.