Chungwoo Kim

发表

Impact of metal work function on memory properties of charge-trap flash memory devices using fowler-nordheim P/E mode

H. Hwang, S. Jeon, Sangmoo Choi, 2006 .

Triple high /spl kappa/ stacks (Al/sub 2/O/sub 3//HfO/sub 2//Al/sub 2/O/sub 3/) with high pressure (10 atm) H/sub 2/ and D/sub 2/ annealing for SONOS type flash memory device applications

H. Hwang, S. Jeon, Yoondong Park, 2004, 4th IEEE Conference on Nanotechnology, 2004..

High-pressure deuterium annealing for improving the reliability characteristics of silicon–oxide–nitride–oxide–silicon nonvolatile memory devices

H. Hwang, S. Jeon, Sangmoo Choi, 2004 .

Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures

Sung Kim, S. Choi, R. Elliman, 2006 .

Fabrication and program/erase characteristics of 30-nm SONOS nonvolatile memory devices

Byung-Gook Park, I. Park, Y. K. Lee, 2003 .

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

Hyunsang Hwang, Sanghun Jeon, Sangmoo Choi, 2005 .

High density silicon nanocrystal embedded in sin prepared by low energy (<500eV) SiH/sub 4/ plasma immersion ion implantation for non-volatile memory applications

Tae-Wook Kim, Hyunsang Hwang, Sanghun Jeon, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

The Effect of Fixed Oxide Charge in Al2O3 Blocking Dielectric on Memory Properties of Charge Trap Flash Memory Devices

S. Jeon, Chungwoo Kim, 2006 .

Fully compatible novel SNONOS structure for improved electrical performance in NAND Flash memories

Seung-Hyun Lee, Ju Hyung Kim, Chungwoo Kim, 2005 .

Modeling of a EEPROM device based on silicon quantum dots embedded in high-k dielectrics

Hei Wong, K. A. Nasyrov, V. A. Gritsenko, 2005 .

A new low voltage fast SONOS memory with high-k dielectric

Jo-Won Lee, K. A. Nasyrov, V. A. Gritsenko, 2003 .

Al2O3 with Metal-Nitride nanocrystals as a charge trapping layer of MONOS-type nonvolatile memory devices

H. Hwang, S. Jeon, Seonghyun Kim, 2005 .

Effects of High-Pressure Deuterium Annealing on Nonvolatile Memory Device with Silicon Nanocrystals Embedded in Silicon Nitride

H. Hwang, S. Jeon, Sangmoo Choi, 2005 .

Single Band Electronic Conduction in Hafnium Oxide Prepared by Atomic Layer Deposition

Hei Wong, Chungwoo Kim, Kaupo Kukli, 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits.