Seiichiro Higashi

发表

Characterization of germanium nanocrystallites grown on SiO2by a conductive AFM probe technique : Fundamental and application of advanced semiconductor devices

Katsunori Makihara, Yoshihiro Okamoto, Hideki Murakami, 2005 .

Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate

Seiichiro Higashi, Seiichi Miyazaki, Daisuke Azuma, 2005, IEICE Trans. Electron..

Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering

Seiichiro Higashi, Seiichi Miyazaki, Akio Ohta, 2012, IEICE Trans. Electron..

Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities

Seiichiro Higashi, Seiichi Miyazaki, Akio Ohta, 2011, IEICE Trans. Electron..

Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure

Seiichiro Higashi, Seiichi Miyazaki, Katsunori Makihara, 2011, IEICE Trans. Electron..

Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer

Seiichiro Higashi, Seiichi Miyazaki, Akio Ohta, 2013, IEICE Trans. Electron..

Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)

Yoshihiro Okamoto, Hideki Murakami, Seiichiro Higashi, 2005 .

Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique

Seiichiro Higashi, Seiichi Miyazaki, Katsunori Makihara, 2005, IEICE Trans. Electron..

Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM

Seiichiro Higashi, Seiichi Miyazaki, Mitsuhisa Ikeda, 2008, IEICE Trans. Electron..

Evaluation of Dielectric Reliability of Ultrathin HfSiOxNy in Metal-Gate Capacitors

Seiichiro Higashi, Seiichi Miyazaki, Yasuo Nara, 2007, IEICE Trans. Electron..

Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior

Seiichiro Higashi, Seiichi Miyazaki, Mitsuhisa Ikeda, 2013, IEICE Trans. Electron..

Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI,AWAD2006)

Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki, 2006 .

Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation.

Seiichiro Higashi, Mitsuhisa Ikeda, Shohei Hayashi, 2012, Applied physics letters.

Electrical Properties of Excimer-Laser-Crystallized Lightly Doped Polycrystalline Silicon Films

Keiji Sakamoto, Seiichiro Higashi, Toshiyuki Sameshima, 1999 .

Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation

Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki, 2006 .

Solid State Devices and Materials

Seiichiro Higashi, Seiji Akita, S. Akita, 2020, Japanese Journal of Applied Physics.

Formation of High-Quality SiO2 and SiO2/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing

Seiichiro Higashi, Seiichi Miyazaki, S. Higashi, 2010 .

Overdense plasma production using electron cyclotron waves

Seiichiro Higashi, Nobuhiro Harada, Akio Komori, 1991 .