J. .. Thuillier

发表

Impact of Insulator Charge Trapping on I.R.C.I.D. Transfer Efficiency

J. Farre, J. Simonne, G. Boucharlat, 1981 .

Non-symmetrical (12̄10) planes of tellurium correlated to the non-symmetrical epitaxy of selenium deposited on these faces

A. Legrand, D. Marchand, P. Tougne, 1976 .

The Effect of Annealing Temperature on the Electron Concentration of Hg0.3Cd0.7Te

J. Zhang, J. .. Thuillier, 1983, June 16.

Determination of the piezoelectric constant d14 of trigonal selenium crystals

D. Royer, E. Dieulesaint, V. Kunigėlis, 1976 .

Magnetoconduction of n‐Inversion Layers on Hg1‐xCdxTe

J. Dufour, J. Vitton, J. .. Thuillier, 1983 .

Abstract: Properties of oxide–Hg1−xCdxTe interfaces

J. .. Thuillier, F. Bazenet, 1979 .

Field effect on monocrystalline tellurium at low temperatures

P. Lombard, J. .. Thuillier, 1971 .

Transport Properties of Carriers at Oxide-Hg1-xCdxTe Interface

J. Dufour, J. Vitton, J. .. Thuillier, 1981 .

Surface quantum transport in tellurium inversion layers

J. .. Thuillier, J. Bouat, 1978 .

Anisotropy of Spin Splitting and the Band Structure Parameters of HgSe from Shubnikov‐De Haas Experiments

W. Dobrowolski, R. Galazka, J. .. Thuillier, 1980 .