Toshiyuki Kai

发表

Development of EUV resist for 22nm half pitch and beyond

Kentaro Goto, Ken Maruyama, Shalini Sharma, 2011, Advanced Lithography.

Development of EUV resist for 22nm half pitch and beyond

Kentaro Goto, Makoto Shimizu, Ken Maruyama, 2010, Advanced Lithography.

Ultra-thin-film EUV resists beyond 20nm lithography

Kentaro Goto, Hiroki Nakagawa, Yoshi Hishiro, 2011, Advanced Lithography.

Characteristics of negative-tone chemically amplified resist (MES-EN1G) for 50-keV EB mask writing system

Masamitsu Itoh, Toshiyuki Kai, Takehiro Kondoh, 2002, Photomask Japan.

Dependence of acid generation efficiency on acid molecular structure and concentration of acid generator in chemically amplified EUV resist

Ryo Hirose, Takahiro Kozawa, Seiichi Tagawa, 2008, SPIE Advanced Lithography.

Deprotonation mechanism of poly(4-hydroxystyrene) and its derivative

Takahiro Kozawa, Seiichi Tagawa, Kazumasa Okamoto, 2005, SPIE Advanced Lithography.

Performance comparison of chemically amplified resists under EUV, EB, and KrF exposure

Nobuji Matsumura, Koichi Fujiwara, Yoshikazu Yamaguchi, 2006, SPIE Advanced Lithography.

Reactivity of Acid Generators for Chemically Amplified Resists with Low-Energy Electrons

Takahiro Kozawa, Seiichi Tagawa, Tsutomu Shimokawa, 2006 .

A novel noria (water-wheel-like cyclic oligomer) derivative as a chemically amplified electron-beam resist material

Tsutomu Shimokawa, Ken Maruyama, Toshiyuki Kai, 2008 .

JSR EUV Resist Development toward 22nmhp Design and Beyond

Makoto Shimizu, Ken Maruyama, Kouta Nishino, 2010 .

Dependence of Absorption Coefficient and Acid Generation Efficiency on Acid Generator Concentration in Chemically Amplified Resist for Extreme Ultraviolet Lithography

Ryo Hirose, Takahiro Kozawa, Seiichi Tagawa, 2007 .

Sensitization Distance and Acid Generation Efficiency in a Model System of Chemically Amplified Electron Beam Resist with Methacrylate Backbone Polymer

Takahiro Kozawa, Seiichi Tagawa, Tsutomu Shimokawa, 2007 .

Dependence of Acid Generation Efficiency on Molecular Structures of Acid Generators upon Exposure to Extreme Ultraviolet Radiation

Ryo Hirose, Takahiro Kozawa, Seiichi Tagawa, 2008 .

Difference between Acid Generation Mechanisms in Poly(hydroxystyrene)- and Polyacrylate-Based Chemically Amplified Resists upon Exposure to Extreme Ultraviolet Radiation

Ryo Hirose, Takahiro Kozawa, Seiichi Tagawa, 2008 .

Relationship between Acid Generator Concentration and Acid Yield in Chemically Amplified Electron Beam Resist

Hiroki Yamamoto, Takahiro Kozawa, Seiichi Tagawa, 2006 .

Acid Generation Mechanism of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Post-Optical Lithography: Acid Yield and Deprotonation Behavior of Poly(4-hydroxystyrene) and Poly(4-methoxystyrene)

Takahiro Kozawa, Seiichi Tagawa, Kazumasa Okamoto, 2006 .

Progress in EUV resist development

Iwao Nishiyama, Koichi Fujiwara, Tsutomu Shimokawa, 2007 .

Analysis of acid yield generated in chemically amplified electron beam resist

Takahiro Kozawa, Seiichi Tagawa, Kazumasa Okamoto, 2006 .

Study of the Reaction of Acid Generators with Epithermal and Thermalized Electrons

Takahiro Kozawa, Seiichi Tagawa, Tsutomu Shimokawa, 2008 .