Cheng-Wei Li

Near-interface oxide traps in 4H–SiC MOS structures fabricated with and without annealing in NO*

Yuming Zhang, Xiaoyan Tang, Qingwen Song, 2017 .

Energy-band alignment of atomic layer deposited (HfO2)x(Al2O3)1 − x gate dielectrics on 4H-SiC

Linpeng Dong, Renxu Jia, Yuming Zhang, 2015 .

Cyclic stretch stimulates recruitment of active Na+/K+-ATPase subunits to the plasma membrane of skeletal muscle cells

Yue Zhang, Xiao Yan, Cheng-Wei Li, 2012, Molecular and Cellular Biochemistry.

Electric properties of La2O3/SiO2/4H-SiC MOS capacitors with different annealing temperatures

Renxu Jia, Yuming Zhang, Wang Yucheng, 2015 .

Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness

Renxu Jia, Yuming Zhang, Yucheng Wang, 2016, Journal of Electronic Materials.

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices

Yuming Zhang, Hongliang Lv, Qingwen Song, 2016 .