W. Jung

Remote plasma atomic layer deposited Al 2 O 3 4H SiC MOS capacitor with remote H 2 plasma passivation and post metallization annealing

R. Choi, C. Choi, Hyun‐Yong Yu, 2015 .

Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics

C. Choi, D. Lim, Youngjin Kim, 2015 .

Improvement of the short channel effect in PMOSFETs using cold implantation

Joo-Sun Choi, I. Kim, Jin-Hong Park, 2016 .

Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2

A. Sokolov, Yu‐Rim Jeon, C. Choi, 2018, Solid-State Electronics.