A. O. Zakhar’in

The influence of oxygen on the formation of donor centers in silicon layers implanted with erbium and oxygen ions

N. Sobolev, O. Aleksandrov, A. O. Zakhar’in, 2005 .

The influence of electrically inactive impurities on the formation of donor centers in silicon layers implanted with erbium

N. Sobolev, O. Aleksandrov, Y. Nikolaev, 2000 .

Formation of donor centers upon annealing of dysprosium-and holmium-implanted silicon

N. Sobolev, O. Aleksandrov, E. I. Shek, 1998 .

Electrical properties of silicon layers implanted with erbium and oxygen ions in a wide dose range and thermally treated in different temperature conditions

N. Sobolev, O. Aleksandrov, Y. Nikolaev, 2002 .