A. Nikolskaya

发表

The Effects of Aluminum Gettering and Thermal Treatments on the Light‐Emitting Properties of Dislocation Structures in Self‐Implanted Silicon Subjected to Boron Ion Doping

D. Korolev, D. Tetelbaum, A. Mikhaylov, 2019, physica status solidi (a).

Light-emitting 9R-Si phase formed by Kr+ ion implantation into SiO2/Si substrate

M. O. Marychev, A. Konakov, D. Korolev, 2018, Applied Physics Letters.

Formation of hexagonal 9R silicon polytype by ion implantation

Mahesh Kumar, N. Sobolev, D. Korolev, 2017 .

Influence of chemical nature of implanted atoms on photoluminescence of ion-synthesized 9R-Si hexagonal silicon

A. Mikhaylov, A. Konakov, D. Korolev, 2021, Materials Letters.

Role of the Solid–Aqueous Medium Interface in Transferring Light-Induced Excitation of Silicon

D. Tetelbaum, A. Stepanov, V. S. Tulovchikov, 2019, Technical Physics.

Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO2/Si Dielectric Matrix

P. Yunin, D. Korolev, A. Belov, 2022, Nanomaterials.

Mechanism of formation of light-emitting silicon hexagonal phase 9R-Si

A. Konakov, D. Korolev, D. Tetelbaum, 2019, Journal of Physics: Conference Series.

Temperature dependence of dislocation-related photoluminescence (D1) of self-implanted silicon subjected to additional boron implantation

A. Mikhaylov, D. Korolev, D. Tetelbaum, 2020 .

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation

D. Korolev, D. Tetelbaum, A. Mikhaylov, 2018, Semiconductors (Woodbury, N.Y.).

Towards an efficient light-emitting source based on self-implanted silicon with dislocation-related luminescence

D. Korolev, D. Tetelbaum, A. Mikhaylov, 2019, Journal of Physics: Conference Series.

Effect of Si+ Ion Implantation in α-Ga2O3 Films on Their Gas Sensitivity

P. Butenko, S. Stepanov, D. Tetelbaum, 2023, IEEE Sensors Journal.

Ion implantation in β-Ga2O3: Physics and technology

Mahesh Kumar, A. Mikhaylov, D. Gogova, 2021 .

Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing

M. O. Marychev, A. Konakov, D. Korolev, 2020 .

Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing

V. Trushin, P. Yunin, A. Konakov, 2023, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Disordering of β-Ga2O3 upon irradiation with Si+ ions: effect of surface orientation

D. Korolev, A. Belov, D. Tetelbaum, 2022, Materials Letters.

Implanted gallium impurity detection in silicon by impedance spectroscopy

D. Tetelbaum, A. Tarasov, A. Lukyanenko, 2021, Materials Letters.

Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect

M. Volochaev, A. Tarasov, N. Volkov, 2021 .

Ion-beam modification of metastable gallium oxide polymorphs

V. Trushin, V. Nikolaev, D. Gogova, 2021, 2103.00317.

Light-emitting hexagonal 9R-Si phase obtained by implantation of Kr+ ions in Si and SiO2/Si

M. O. Marychev, A. Konakov, D. Korolev, 2020, Journal of Physics: Conference Series.

Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation

A. Kudrin, M. Drozdov, V. Trushin, 2023, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.