V. Vezin

Influence of the doping level on the microstructure of P-type porous silicon studied by small-angle X-ray scattering

G. Bomchil, P. Goudeau, A. Naudon, 1991 .

Fabrication of a 7.6‐in.‐diagonal prototype ballistic electron surface‐emitting display on a glass substrate

Y. Takegawa, T. Komoda, Y. Honda, 2004 .

FABRICATION OF FERROELECTRIC PZT THIN FILMS BY LIQUID DELIVERY MOCVD USING NOVEL Zr and Ti PRECURSORS

J. Bläsing, P. Baumann, A. Krost, 2008 .

Characterization of Defects in Li2B4O7 Crystals Grown by Czochralski and Bridgman Methods

T. Sugawara, V. Vezin, Ryuichi Komatsu Ryuichi Komatsu, 1997 .

Scattering of X-rays

P. Goudeau, A. Naudon, V. Vezin, 1995 .

Characterization of photoluminescent porous Si by small‐angle scattering of x rays

G. Bomchil, A. Halimaoui, P. Goudeau, 1992 .

Atomic Vapor Deposition (AVD®) for High-k Dielectric and Ferroelectric films

P. Baumann, J. Lindner, U. Weber, 2007, 2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics.

Correlation between the Porous Silicon Morphology and the Photoluminescence Efficiency

G. Bomchil, A. Halimaoui, P. Goudeau, 1995 .

Growth of Ga1-xBxN by Molecular Beam Epitaxy

V. Vezin, Satoshi Uda Satoshi Uda, Satoshi Yatagai, 1997 .