I. A. Bobrovnikova

发表

Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy

V. Preobrazhenskii, M. D. Vilisova, M. Putyato, 2003 .

Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy

V. Chaldyshev, V. Preobrazhenskii, M. D. Vilisova, 2006 .

Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures

V. Chaldyshev, V. Preobrazhenskii, M. D. Vilisova, 2004 .

Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy

V. Chaldyshev, V. Preobrazhenskii, M. D. Vilisova, 1998 .

Physics of semiconductors and dielectrics theoretical and experimental study of surface Processes during vapor-phase epitaxy of III–V compounds

I. Ivonin, I. V. Ivonin, I. A. Bobrovnikova, 2006 .

Doping and impurity-vacancy complex formation during vapour-phase epitaxy of gallium arsenide

M. D. Vilisova, L. G. Lavrent’eva, I. A. Bobrovnikova, 1992 .

Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride

V. Novikov, V. Preobrazhenskii, I. V. Ivonin, 2009 .

Structure and properties of epitaxial layers of InxGa1−xAs grown from the gas phase

M. D. Vilisova, I. A. Bobrovnikova, M. P. Yakubenya, 1992 .

Vapour phase epitaxial grown GaAs films with a very low deep level concentration

E. Astrova, V. Chaldyshev, M. D. Vilisova, 1995 .

Electrophysical properties of epitaxial gallium arsenide doped with acceptor impurities

M. D. Vilisova, L. G. Lavrent’eva, I. A. Bobrovnikova, 1995 .

Preparation and properties of epitaxial ZnGeP2 films

V. Voevodin, I. A. Bobrovnikova, M. P. Yakubenya, 1988 .

Evolution of Surface Morphology of Anthracene Single Crystals Under Annealing

R. M. Gadirov, T. A. Solodova, V. Novikov, 2019, Russian Physics Journal.