S. Subach

发表

Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy

V. Preobrazhenskii, M. D. Vilisova, M. Putyato, 2003 .

The Effect of Flow Ratio between Elements of Groups III and V on the Structure and Properties of InGaAs Layers Grown by Low-Temperature Molecular-Beam Epitaxy

V. Preobrazhenskii, M. D. Vilisova, M. Putyato, 2000 .

Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy

Yu. G. Musikhin, N. Bert, V. Chaldyshev, 1999 .

Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy

V. Chaldyshev, V. Preobrazhenskii, M. D. Vilisova, 1998 .

Initial stages in the growth and development of junctions in heteroepitaxy of InP on GaAs

L. G. Lavrent’eva, I. V. Ivonin, S. Subach, 1996 .

The role of the adsortption layer in the formation of phase inhomogeneity at the InP/GaAs interface

I. Ivonin, I. V. Ivonin, S. Subach, 2006 .

Defect formation in LT MBE InGaAs and GaAs

L. Anisimova, A. Gutakovskii, M. Putyato, 2004 .