S. Toropov

Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy

V. Preobrazhenskii, M. D. Vilisova, M. Putyato, 2003 .

Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures

V. Chaldyshev, V. Preobrazhenskii, M. D. Vilisova, 2004 .

Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy

V. Chaldyshev, V. Preobrazhenskii, M. D. Vilisova, 2002 .

Physics of semiconductors and dielectrics theoretical and experimental study of surface Processes during vapor-phase epitaxy of III–V compounds

I. Ivonin, I. V. Ivonin, I. A. Bobrovnikova, 2006 .

Effects of gas flow speed and chlorine concentration on tellurium uptake in gas-phase epitaxy of gallium arsenide

L. P. Porokhovnichenko, L. G. Lavrent’eva, S. Toropov, 1982 .

Effects of growth temperature and substrate orientation on the entry of tellurium into epitaxial gallium arsenide films

M. D. Vilisova, L. G. Lavrent’eva, S. Toropov, 1982 .

Influence of crystallization temperature on growth rate of epitaxial gallium arsenide layers in the system GaAs-AsCl3-H2

V. Ivanov, L. G. Lavrent’eva, I. V. Ivonin, 1982 .