X. Du

发表

Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence

J. Lin, Hongxing Jiang, J. Edgar, 2014 .

Layer number dependent optical properties of multilayer hexagonal BN epilayers

Hongxing Jiang, Jingyu Lin, Jing Li, 2017 .

Large-Scale Growth of High-Quality Hexagonal Boron Nitride Crystals at Atmospheric Pressure from an Fe–Cr Flux

B. Liu, Hongxing Jiang, Jingyu Lin, 2017 .

InGaN/GaN multi-quantum-well planar metal-semiconductor-metal light-emitting diodes

Hai Lu, Li Yuewen, Y. Zheng, 2008 .

Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition

Hongxing Jiang, Jingyu Lin, Jing Li, 2015 .

Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride

J. Lin, Hongxing Jiang, Jingyu Lin, 2017 .

Insights into superconductivity of LaO from experiments and first-principles calculations

Y. Yin, X. Li, P. Jiang, 2021, Physical Review B.

The origin of deep-level impurity transitions in hexagonal boron nitride

Jing Li, Hongxing Jiang, Hongxing Jiang, 2015 .

p-Type AlN nanowires and AlN nanowire light emitting diodes on Si

Z. Mi, J. Lin, I. Shih, 2015, 2015 IEEE Summer Topicals Meeting Series (SUM).

Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux technique

Hongxing Jiang, M. Currie, Jingyu Lin, 2014 .

Synthesis and photoluminescence properties of hexagonal BGaN alloys and quantum wells

Hongxing Jiang, Jingyu Lin, Jing Li, 2018, Applied Physics Express.

The origins of near band-edge transitions in hexagonal boron nitride epilayers

Hongxing Jiang, Jingyu Lin, Jing Li, 2016 .

Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

Z. Mi, J. Lin, Hongxing Jiang, 2014 .

Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy

Zetian Mi, Hongxing Jiang, Songrui Zhao, 2015 .