I. G. Thayne

Front-end building blocks using the Glasgow 0.2 /spl mu/m GaAs MESFET process

N. Cameron, S. P. Beaumont, D. G. Haigh, 1997 .

Investigation of Loading Effect on Power Performance for Planar Gunn Diodes Using Load-Pull Measurement Technique

L.B. Lok, A. Khalid, I. G. Thayne, 2011, IEEE Microwave and Wireless Components Letters.

Microelectronics Teaching — The Glasgow Approach

I. G. Thayne, 1998 .

A 77 GHz coplanar waveguide MMIC BPSK vector modulator realised using InP technology

Helen McLelland, Khaled Elgaid, I. G. Thayne, 2000, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084).

Metamorphic GaAs HEMTs with fT of 200 GHz

S. P. Beaumont, M.R.S. Taylor, Helen McLelland, 1999 .

Advanced technology microwave multi-channel temperature and humidity sounder for the 21st Century

I. G. Thayne, D. L. Edgar, N. A. Grant, 1999, 1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference.

On-wafer W-band determination of the driving point impedance of a double slot antenna

de Pji Peter Maagt, Helen McLelland, Khaled Elgaid, 1999 .

A W-band MMIC vector modulator utilizing tandem couplers and 50nm MHEMTs

K. Elgaid, I. G. Thayne, L. B. Lok, 2009, 2009 European Microwave Conference (EuMC).

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

James Glover, David R. S. Cumming, Ata Khalid, 2014 .

Metamorphic GaAs HEMTs with f/sub T/ of 200 GHz

M.R.S. Taylor, Helen McLelland, I. G. Thayne, 1999 .

$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz

G. M. Dunn, A. Khalid, D. R. S. Cumming, 2013, IEEE Electron Device Letters.

First demonstration of InAlAs/InGaAs HEMTs using T-gates fabricated by a bilayer of UVIII and PMMA resists

Helen McLelland, I. G. Thayne, D. L. Edgar, 2000, 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534).

Low-frequency noise of selectively dry-etch gate-recessed GaAs MESFETs

N. Cameron, M.R.S. Taylor, Khaled Elgaid, 1995 .