Martin Holland

发表

Front-end building blocks using the Glasgow 0.2 /spl mu/m GaAs MESFET process

N. Cameron, S. P. Beaumont, D. G. Haigh, 1997 .

An Ultra-Low-Power MMIC Amplifier Using

Lai Bun Lok, Iain G. Thayne, Khaled Elgaid, 2010 .

Review of current status of III-V MOSFETs

Xi Li, Karol Kalna, Ravi Droopad, 2009 .

Pseudomorphic HEMT small signal equivalent circuit model scaling

S. P. Beaumont, M.R.S. Taylor, Helen McLelland, 1994 .

Advanced III-V HEMT MMIC Technologies for Millimetre-Wave Applications

Iain G. Thayne, David A. J. Moran, Helen McLelland, 2003 .

mm-wave Performance of 50nm T-Gate AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistors with fT of 200 GHz

Iain G. Thayne, Helen McLelland, Martin Holland, 2003 .

Fabrication of very high performance 50nm T-gate metamorphic GaAs HEMT's with exceptional uniformity

Iain G. Thayne, David A. J. Moran, Khaled Elgaid, 2004 .

Metamorphic GaAs HEMTs with fT of 200 GHz

S. P. Beaumont, M.R.S. Taylor, Helen McLelland, 1999 .

Reduced short channel effects in selectively dry gate recessed P-doped buffered pseudomorphic HEMTs

Asen Asenov, S. P. Beaumont, M.R.S. Taylor, 1994 .

High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors

Iain G. Thayne, Martin Holland, C. R. Stanley, 2003 .

Selective reactive ion etching of GaAs/AlGaAs metal‐semiconductor field effect transistors

S. P. Beaumont, Iain G. Thayne, Martin Holland, 1991 .

In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope

Werner Wegscheider, Martin Holland, Klaus Ensslin, 1998 .

Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration

Yee-Chia Yeo, Aryan Afzalian, Gerben Doornbos, 2017, Scientific Reports.

Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta‐doping layers

David R. S. Cumming, Ata Khalid, Martin Holland, 2011 .

DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications

Iain G. Thayne, Khaled Elgaid, Martin Holland, 2009 .

Metamorphic GaAs HEMTs with f/sub T/ of 200 GHz

M.R.S. Taylor, Helen McLelland, I. G. Thayne, 1999 .

Selective reactive ion etching of InGaAs and InP over InAlAs in SiCl4/SiF4/HBr plasmas

S. P. Beaumont, S. K. Murad, Martin Holland, 1995 .

Nanolithography with an atomic force microscope for integrated fabrication of quantum electronic devices

Martin Holland, S. Kühn, M. Holland, 1994 .

Improvements in strain‐balanced InGaAs/GaAs optical modulators for 1047‐nm operation

Andrew C. Walker, C. R. Stanley, Martin Holland, 1994 .

50nm Metamorphic GaAs and InP HEMTs

Iain G. Thayne, David A. J. Moran, E. Boyd, 2007 .

Semiconductor quantum point contact fabricated by lithography with an atomic force microscope

Martin Holland, Klaus Ensslin, Thomas Heinzel, 1997 .

Low-frequency noise of selectively dry-etch gate-recessed GaAs MESFETs

N. Cameron, M.R.S. Taylor, Khaled Elgaid, 1995 .