S. Engelmann

High-mobility high-Ge-content Si1−xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width

E. Leobandung, P. Hashemi, Takashi Ando, 2015, 2015 Symposium on VLSI Circuits (VLSI Circuits).

Coupling of hydraulic and electrical transport properties in sandstones

Harald Milsch, S. Engelmann, Guido Blöcher, 2007 .

Studies of plasma surface interactions during short time plasma etching of 193 and 248 nm photoresist materials

S. Engelmann, Erica Iacob, Gottlieb S. Oehrlein, 2006 .