R. T. Mo

High-mobility high-Ge-content Si1−xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width

E. Leobandung, P. Hashemi, Takashi Ando, 2015, 2015 Symposium on VLSI Circuits (VLSI Circuits).

Electron mobility in thin In0.53Ga0.47As channel

X. Sun, C.-C. Yeh, Martin M. Frank, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

A prognostics framework for reliability optimization of mass-produced vehicle onboard diagnostics system

J. Liu, Bernard Fong, R. T. Mo, 2015, 2015 IEEE 4th Global Conference on Consumer Electronics (GCCE).

SiGe-on-insulator symmetric lateral bipolar transistors

R. T. Mo, T. H. Ning, S. U. Engelmann, 2015, 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process

T. Ando, V. Narayanan, E. Leobandung, 2017, 2017 Symposium on VLSI Technology.

Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths

T. Ando, V. Narayanan, E. Leobandung, 2016, 2016 IEEE Symposium on VLSI Technology.