T. Higashi

Reduction of Bipolar Disturb of Floating-Body Cell (FBC) by Silicide and Thin Silicon Film Formed at Source and Drain Regions

T. Hamamoto, Y. Fukuzumi, A. Nitayama, 2010, IEEE Transactions on Electron Devices.

A Floating Body Cell (FBC) fully Compatible with 90nm CMOS Technology Node for Embedded Applications

Atsushi Sakamoto, Akihiro Nitayama, Takashi Ohsawa, 2006, 2006 IEEE International Conference on IC Design and Technology.

Atomic-scale insights into the origin of rectangular lattice in nanographene probed by scanning tunneling microscopy

K. Yamamura, K. Inagaki, K. Kawai, 2021, Physical Review B.

Floating Body RAM Technology and its Scalability to 32nm Node and Beyond

T. Ohsawa, T. Higashi, A. Nitayama, 2006, 2006 International Electron Devices Meeting.

An 18.5ns 128MB SOI DRAM with a floating body cell

Takashi Ohsawa, Shigeyoshi Watanabe, Takeshi Hamamoto, 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..

Fully-depleted FBC (floating body cell) with enlarged signal window and excellent logic process compatibility

Akihiro Nitayama, Takashi Ohsawa, K. Inoh, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Memory design using one-transistor gain cell on SOI

T. Ohsawa, K. Fujita, T. Higashi, 2002, 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).

Scaling scenario of floating body cell (FBC) suppressing Vth variation due to random dopant fluctuation

Akihiro Nitayama, Ryo Fukuda, Takashi Ohsawa, 2008, 2008 IEEE International SOI Conference.

Generation of Accurate Reference Current for Data Sensing in High-Density Memories by Averaging Multiple Pairs of Dummy Cells

Takashi Ohsawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, 2011, IEEE Journal of Solid-State Circuits.