B. Joyce

发表

Inp-alinas “strain free” early stages heteroepitaxy leading to nanostructure formation by MOVPE

D. Vvedensky, A. Gocalinska, E. Pelucchi, 2014, 26th International Conference on Indium Phosphide and Related Materials (IPRM).

Modulated molecular beam and RHEED studies of MBE and MOMBE growth

C. Foxon, Jing Zhang, E. M. Gibson, 1990 .

Tailoring Semiconductor Crystals to Atomic Dimensions

B. Joyce, 1989 .

Tailoring Semiconductor Crystal to atomic dimensions

B. Joyce, 1989 .

Scanning Transmission Electron Microscopy (STEM) Study of InAs/GaAs Quantum Dots

R. Murray, S. Malik, C. Roberts, 1999 .

The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam technique

C. T. Foxon, J. A. Harvey, B. A. Joyce, 1973 .

The identification of species evolved in the evaporation of III-V compounds

C. Foxon, R. Farrow, B. Joyce, 1974 .

Scanning auger electron microscopy at 30 nm resolution

J. Venables, C. Harland, A. Janssen, 1976 .

The growth and structure of semiconducting thin films

B. Joyce, 1974 .

Quantum dots : fundamentals, applications, and frontiers

D. Vvedensky, A. Naumovets, P. Kelires, 2005 .

A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques: II. initial growth behaviour on clean and carbon-contaminated silicon substrates

B. A. Joyce, G. Booker, B. Joyce, 1966 .

A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques I.—experimental methods

R. Bradley, B. Joyce, 1966 .

Quantum Dots in the InAs/GaAs System

D. Vvedensky, B. Joyce, 2005 .

Self-organized growth on GaAs surfaces

Dimitri D. Vvedensky, B. A. Joyce, D. Vvedensky, 2004 .

Chapter 2 Adsorption, Desorption and Migration on Semiconductor Surfaces

B. A. Joyce, C. Foxon, B. Joyce, 1984 .

Adsorption-desorption studies of Zn on GaAs

C. Foxon, J. Venables, G. Samuel, 1977 .

Interaction kinetics of As2 and Ga on {100} GaAs surfaces

C. Foxon, B. Joyce, 1977 .

A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviour

G. Booker, R. Bradley, B. Joyce, 1967 .

A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques. IV. Additional confirmation of the induction period and nucleation mechanisms

B. Watts, G. Booker, R. Bradley, 1968 .

A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques

B. Watts, G. Booker, R. Bradley, 1969 .

Perfection of Expitaxial Silicon Layers Grown by the Pyrolysis of Silane

G. Booker, R. Bradley, B. Joyce, 1964 .

Growth mechanism and defect structures in epitaxial silicon

R. Bicknell, D. Stirland, J. M. Charig, 1962 .

The technology of semiconductor materials preparation

B. A. Joyce, J. Brice, B. Joyce, 1973 .

Invited: Growth and Doping Kinetics in Molecular Beam Epitaxy

C. Foxon, B. Joyce, 1977 .

Growth and perfection of chemically-deposited epitaxial layers of Si and GaAs

B. Joyce, 1968 .

Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique

C. Foxon, B. Joyce, 1975 .

Evaluation of surface kinetic data by the transform analysis of modulated molecular beam measurements

C. Foxon, M. Boudry, B. Joyce, 1974 .

The epitaxy of silicon on alumina—structural effects

G. V. Smith, J. Neave, R. Bicknell, 1966 .

Epitaxial Growth of Silicon from the Pyrolysis of Monosilane on Silicon Substrates

R. Bradley, B. Joyce, 1963 .

The epitaxial deposition of silicon on quartz

R. Bicknell, D. Stirland, J. M. Charig, 1964 .

Epitaxial deposition of silicon on quartz

R. Bicknell, D. Stirland, J. M. Charig, 1963 .

Epitaxial Growth of Silicon by Hydrogen Reduction of SiHCl3 onto Silicon Substrates

B. A. Joyce, J. M. Charig, B. Joyce, 1962 .

Silicon migration during MBE growth of doped (A1, Ga)As films

J. P. Gowers, C. Foxon, D. Hilton, 1986 .

Instrument response function of a quadrupole mass spectrometer used in time-of-flight measurements

C. Foxon, S. Holloway, B. Joyce, 1976 .

Residual donor contamination in MOCVD, MOMBE and MBE GaAs studied by far-infrared spectroscopy

G. W. Smith, C. Foxon, M. Weyers, 1989 .

Dynamics and kinetics of MBE growth

C. T. Foxon, J. Neave, S. Armstrong, 1991 .

Modulated molecular beam study of group III desorption during growth by MBE

C. Foxon, E. M. Gibson, Jing Zhang, 1991 .

Gallium desorption from GaAs and (Al,Ga)As during molecular beam epitaxy growth at high temperatures

C. Foxon, E. M. Gibson, Jing Zhang, 1990 .

Step Profile Fluctuations in Quantum-Well Wire Growth on Vicinal Surfaces

D. Vvedensky, S. Clarke, B. Joyce, 1989 .

Molecular beam epitaxy of multilayer structures with GaAs and AlxGa1−xAs

C. Foxon, B. Joyce, 1987 .

Site-Specific Processes During MBE and MOMBE Growth of III–V Compounds on Singular and Vicinal Surfaces

R. Fawcett, J. Neave, T. Kaneko, 1994 .

Heteroepitaxial Growth Modes and Morphologies on Surfaces

D. Vvedensky, B. Joyce, 1999 .

Donald William Pashley. 21 April 1927 — 16 May 2009

M. Stowell, B. Joyce, 2010, Biographical Memoirs of Fellows of the Royal Society.

Basic studies of molecular beam epitaxy—past, present and some future directions

B. Joyce, T. Joyce, B. Joyce, 2004 .

KINETIC STUDIES OF THE GROWTH OF III–V COMPOUNDS USING MODULATED MOLECULAR BEAM TECHNIQUES

C. Foxon, B. Joyce, 1975 .

The evaluation of growth dynamics in MBE using electron diffraction

B. A. Joyce, B. Joyce, 1990 .

Kinetics in Molecular Beam Epitaxy — Modulated Beam Studies

C. T. Foxon, E. M. Gibson, Jing Zhang, 1990 .