Jérôme Marcon

Hot carrier reliability of RF N- LDMOS for S Band radar application

Hichame Maanane, Mohamed Masmoudi, M. Gares, 2006, Microelectron. Reliab..

Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance

Hichame Maanane, Mohamed Masmoudi, M. Gares, 2006, 2006 Canadian Conference on Electrical and Computer Engineering.

Study of RF N- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF

K. Ketata, Hichame Maanane, Mohamed Masmoudi, 2006, Microelectron. Reliab..

Reliability study of power RF LDMOS device under thermal stress

K. Ketata, Mohamed Masmoudi, M. Gares, 2007, Microelectron. J..

Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests

K. Ketata, Hichame Maanane, Mohamed Masmoudi, 2006, Microelectron. Reliab..

Reliability study of Power RF LDMOS for Radar Application

K. Ketata, Hichame Maanane, Mohamed Masmoudi, 2004, Microelectron. Reliab..

Comparative analysis of accelerated ageing effects on power RF LDMOS reliability

K. Ketata, Hichame Maanane, Mohamed Masmoudi, 2005, Microelectron. Reliab..

Study of hot-carrier effects on power RF LDMOS device reliability

Hichame Maanane, Mohamed Masmoudi, M. Gares, 2007, Microelectron. Reliab..

Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests

K. Ketata, Mohamed Masmoudi, M. Gares, 2007, Microelectron. Reliab..