Zhijia Zhao

发表

Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction

Kemeng Yang, S. Deng, T. Sun, 2022, Nanoscale Research Letters.

High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss

Kemeng Yang, S. Deng, T. Sun, 2022, IEEE Journal of the Electron Devices Society.

High voltage GaN vertical FinFET with a compatible integrated fin diode for low reverse conduction loss

Bo Zhang, Kemeng Yang, S. Deng, 2023, Microelectron. J..

Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage

Zhijia Zhao, Shuxiang Sun, Xintong Xie, 2024, Journal of Science: Advanced Materials and Devices.