M. Zenari

Analysis of dislocation-related and point-defects in III-As layers by extensive DLTS study

M. Meneghini, G. Meneghesso, E. Zanoni, 2022, LASE.

Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate

G. Meneghesso, C. de Santi, J. Norman, 2021, Microelectronics Reliability.

Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

J. Bowers, M. Meneghini, G. Meneghesso, 2021, Journal of Physics D: Applied Physics.

Optical degradation of InAs quantum-dot lasers on silicon: dependence on temperature and on diffusion processes

J. Bowers, M. Meneghini, G. Meneghesso, 2022, OPTO.

Origin of the Diffusion-Related Optical Degradation of 1.3 μm Inas QD-LDs Epitaxially Grown on Silicon Substrate

J. Bowers, M. Meneghini, G. Meneghesso, 2022, IEEE Journal of Selected Topics in Quantum Electronics.

Improving the reliability of InAs quantum-dot laser diodes for silicon photonics: the role of trapping layers and misfit-dislocation density

J. Bowers, M. Meneghini, G. Meneghesso, 2023, OPTO.

Degradation mechanisms of laser diodes for silicon photonics applications

J. Bowers, G. Meneghesso, C. de Santi, 2023, OPTO.

Impact of a defect trapping layer on the reliability of 1.3 μm quantum dot laser diodes grown on silicon

G. Meneghesso, C. de Santi, Y. Wan, 2022, Microelectronics Reliability.