J.S. Laird

Analog Single Event Transient susceptibility of an SOI operational amplifier for use in low-temperature radiation environments

J.S. Laird, L. Scheik, T. Miyahira, 2007, 2007 9th European Conference on Radiation and Its Effects on Components and Systems.

Single-Event Transients in Voltage Regulators

J.S. Laird, F. Irom, T.F. Miyahira, 2006, IEEE Transactions on Nuclear Science.

The Role of Ion Track Structure on High-Injection Carrier Dynamics in High-Speed Si and III-V Optoelectronic Sensors

J.S. Laird, S. Onoda, L. Edmonds, 2007, IEEE Transactions on Nuclear Science.

Temperature dependence of single-event transient current induced by heavy-ion microbeam on p/sup +//n/n/sup +/ epilayer junctions

J.S. Laird, S. Onoda, T. Wakasa, 2003, Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003..

Comparison of Above Bandgap Laser and MeV Ion Induced Single Event Transients in High-Speed Si Photonic Devices

A. Johnston, J.S. Laird, S. Onoda, 2006, IEEE Transactions on Nuclear Science.

Transient Currents Generated by Heavy Ions With Hundreds of MeV

J.S. Laird, S. Onoda, S. Onoda, 2006, IEEE Transactions on Nuclear Science.

Temperature dependence of heavy ion induced current transients in Si epilayer devices

J.S. Laird, S. Onoda, T. Hirao, 2001, RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605).

Investigation of Single-Event Transients in Linear Voltage Regulators

V. Pouget, J.S. Laird, F. Irom, 2008, IEEE Transactions on Nuclear Science.