Paul S. McLaughlin

Wafer Scale Cu Plating Process Optimization for Defectivity Improvement

Qiang Huang, Naftali E. Lustig, Shafaat Ahmed, 2014 .

Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes

Fen Chen, Daniel C. Edelstein, Ian D. Melville, 2005, SPIE Optics East.

The effect of a threshold failure time and bimodal behavior on the electromigration lifetime of copper interconnects

Paul S. McLaughlin, Ronald G. Filippi, James R. Lloyd, 2009, IRPS 2009.

Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes

Wei Wang, Raghuveer Patlolla, Elbert Huang, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Nondestructive electrical characterization of integrated interconnect line-to-line spacing for advanced semiconductor chips

Fen Chen, Paul S. McLaughlin, Kaushik Chanda, 2007 .

Ruthenium interconnect resistivity and reliability at 48 nm pitch

Wei Wang, Raghuveer Patlolla, Huai Huang, 2016, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).

Electromigration Challenges for Nanoscale Cu Wiring

Chenming Hu, C.-C. Yang, Paul S. McLaughlin, 2009 .