Lara K. Teles

发表

The LDA-1/2 technique: Recent developments

Luiz G. Ferreira, R. R. Pelá, Lara K. Teles, 2013 .

Strain-induced ordering in InxGa1−xN alloys

Donat Josef As, Lara K. Teles, L. M. R. Scolfaro, 2003 .

Accurate band gaps of AlGaN‚ InGaN‚ and AlInN alloys calculations based on LDA-1/2 approach

R. R. Pelá, Lara K. Teles, Marcelo Marques, 2011 .

Phase separation, gap bowing, and structural properties of cubic InxAl1-xN

Friedhelm Bechstedt, Lara K. Teles, Jürgen Furthmüller, 2002 .

Approximation to density functional theory for the calculation of band gaps of semiconductors

Lara K. Teles, Marcelo Marques, Luiz G. Ferreira, 2008, 0808.0729.

Slater half-occupation technique revisited: the LDA-1/2 and GGA-1/2 approaches for atomic ionization energies and band gaps in semiconductors

Lara K. Teles, Marcelo Marques, Luiz G. Ferreira, 2011 .

All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces

R. R. Pelá, Lara K. Teles, Marcelo Marques, 2013 .

Structural properties and Raman modes of zinc blende InN epitaxial layers

Klaus Lischka, Lara K. Teles, A. P. Lima, 1999 .

Energy gap and optical properties of InxGa1–xN

Oliver Ambacher, Friedhelm Bechstedt, V. Yu. Davydov, 2003 .

Phase diagram, chemical bonds, and gap bowing of cubic InxAl1−xN alloys: Ab initio calculations

Friedhelm Bechstedt, Lara K. Teles, J. R. Leite, 2002 .

Combined LDA and LDA-1/2 method to obtain defect formation energies in large silicon supercells

R. R. Pelá, Lara K. Teles, Marcelo Marques, 2013 .

First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys

Lara K. Teles, F. Bechstedt, J. Furthmüller, 2000 .

Phase separation suppression in InGaN epitaxial layers due to biaxial strain

Klaus Lischka, Friedhelm Bechstedt, Donat Josef As, 2002 .

Influence of composition fluctuations and strain on gap bowing inInxGa1−xN

Lara K. Teles, Luisa Scolfaro, F. Bechstedt, 2001 .

Charge transition levels of Mn-doped Si calculated with the GGA-1/2 method

R. R. Pelá, Lara K. Teles, Marcelo Marques, 2014 .

GaMnAs: Position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations

R. R. Pelá, Lara K. Teles, Marcelo Marques, 2012 .

Influence of structure and thermodynamic stability on electronic properties of two-dimensional SiC, SiGe, and GeC alloys

R. R. Pelá, Lara K. Teles, Marcelo Marques, 2015 .