T. Yamaguchi

High performance copper and low-k interconnect technology fully compatible to 90nm-node SOC application (CMOS4)

K. Sunouchi, M. Inohara, I. Tamura, 2002, Digest. International Electron Devices Meeting,.

Influence of pre-existing and generated traps on reliability in HfSiON/SiO2 stacks with fluorine incorporation

Y. Mitani, T. Yamaguchi, I. Hirano, 2008, 2008 IEEE International Reliability Physics Symposium.

Thermochemical understanding of dielectric breakdown in HfSiON with current acceleration

T. Yamaguchi, I. Hirano, M. Takayanagi, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..