Guido Groeseneken

发表

Behavior of RF MEMS switches under ESD stress

Dimitri Linten, Sandeep Sangameswaran, Jeroen De Coster, 2010, Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010.

Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling

Massimo Alioto, Liesbeth Witters, Guido Groeseneken, 2012, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

BJT-Mode Endurance on a 1T-RAM Bulk FinFET Device

Zhichao Lu, Guido Groeseneken, Marc Aoulaiche, 2010, IEEE Electron Device Letters.

Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures

Yuan Taur, Hiroshi Iwai, Aaron Thean, 2014, Microelectron. Reliab..

Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation

Naoto Horiguchi, Guido Groeseneken, Ben Kaczer, 2016, IEEE Journal of the Electron Devices Society.

Technology-aware ESD-reliable RF CMOS circuit design

Natarajan Mahadeva Iyer, Mirko Scholz, Dimitri Linten, 2006 .

RF ESD protection strategies - the design and performance trade-off challenges

Dimitri Linten, Steven Thijs, Guido Groeseneken, 2005, Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005..

Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing

Guido Groeseneken, Christian Russ, Ingrid De Wolf, 1999 .

Impact of Duty Factor, Stress Stimuli, and Gate Drive Strength on Gate Delay Degradation with an Atomistic Trap-Based BTI Model

Rudy Lauwereins, Liesbet Van der Perre, Francky Catthoor, 2012, DSD.

NBTI Aging on 32-Bit Adders in the Downscaling Planar FET Technology Nodes

Rudy Lauwereins, Liesbet Van der Perre, Francky Catthoor, 2014, 2014 17th Euromicro Conference on Digital System Design.

Cell Variability Impact on the One-Selector One-Resistor Cross-Point Array Performance

Guido Groeseneken, Malgorzata Jurczak, Stefan Cosemans, 2015, IEEE Transactions on Electron Devices.

The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices

Aaron Thean, Philippe Roussel, Guido Groeseneken, 2015, 2015 IEEE International Reliability Physics Symposium.

Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices

Geert Hellings, Jerome Mitard, Anne Vandooren, 2010, Advanced Lithography.

Methodology for Design Optimization of SOI FinFET Grounded-Gate NMOS Devices

Mirko Scholz, Dimitri Linten, Rita Rooyackers, 2010, IEEE Transactions on Device and Materials Reliability.

One-Selector One-Resistor Cross-Point Array With Threshold Switching Selector

Guido Groeseneken, Malgorzata Jurczak, Stefan Cosemans, 2015, IEEE Transactions on Electron Devices.

Modeling RRAM SET and RESET statistics with guidelines for optimized operation

Guido Groeseneken, Dirk Wouters, Malgorzata Jurczak, 2013, VLSIT 2013.

Effect of the n+sinker in self-triggering bipolar ESD protection structures

Guido Groeseneken, Peter Moens, Vincent De Heyn, 2002, 2002 Electrical Overstress/Electrostatic Discharge Symposium.

Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling

Massimo Alioto, Liesbeth Witters, Guido Groeseneken, 2011, 2011 IEEE International Symposium of Circuits and Systems (ISCAS).

ESD circuit model based protection network optimisation for extended-voltage NMOS drivers

Guido Groeseneken, Philippe Jansen, Vesselin K. Vassilev, 2005, Microelectron. Reliab..

Advanced ESD power clamp design for SOI FinFET CMOS technology

Natarajan Mahadeva Iyer, Dimitri Linten, Steven Thijs, 2010, 2010 IEEE International Conference on Integrated Circuit Design and Technology.

BTI reliability from planar to FinFET nodes: Will the next node be more or less reliable?

Rudy Lauwereins, Liesbet Van der Perre, Francky Catthoor, 2014 .

Selector design considerations and requirements for 1 SIR RRAM crossbar array

Guido Groeseneken, Malgorzata Jurczak, Stefan Cosemans, 2014, 2014 IEEE 6th International Memory Workshop (IMW).

Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions

Asen Asenov, Guido Groeseneken, Ben Kaczer, 2014, IEEE Transactions on Electron Devices.

Defect-centric perspective of time-dependent BTI variability

Philippe Roussel, Tibor Grasser, Guido Groeseneken, 2012, Microelectron. Reliab..

Miscorrelation between IEC61000-4-2 type of HMM tester and 50 _x0019_$X HMM tester

Gerd Vandersteen, Mirko Scholz, Shih-Hung Chen, 2012 .

Electrostatic discharges protection for emerging technologies and RF applications

Natarajan Mahadeva Iyer, Dimitri Linten, Guido Groeseneken, 2005 .

Design and simulation of on-chip circuits for parallel characterization of ultrascaled transistors for BTI reliability

Guido Groeseneken, Jacopo Franco, Ben Kaczer, 2014, 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).

Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs

Guido Groeseneken, Jasper Bizindavyi, Anne S. Verhulst, 2018, 2018 76th Device Research Conference (DRC).

Reliability issues inadvanced Highk/metal gatestacks for45nm CMOS applications

Guido Groeseneken, L. Pantisano, Marc Aoulaiche, 2006 .

Breakdown and hot carrier injection in deep trench isolation structures

Guido Groeseneken, Peter Moens, B. Elattari, 2005 .

High-k gate stack engineering : Towards meeting low standby power and high performance targets

Paul Zimmerman, Guido Groeseneken, L. Pantisano, 2005 .

The defect-centric perspective of device and circuit reliability — From individual defects to circuits

Francky Catthoor, Dimitri Linten, Philippe Roussel, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

Transient voltage overshoot in TLP testing — Real or artifact?

Philippe Roussel, Steven Thijs, Guido Groeseneken, 2005, 2005 Electrical Overstress/Electrostatic Discharge Symposium.

ESD On-Wafer Characterization: Is TLP Still the Right Measurement Tool?

Mirko Scholz, Dimitri Linten, Sandeep Sangameswaran, 2009, IEEE Transactions on Instrumentation and Measurement.

Techniques and Devices

Guido Groeseneken, Jacopo Franco, Ben Kaczer, 2014 .

Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

E. Vandamme, Guido Groeseneken, Ben Kaczer, 2000 .

Simulation of enhanced injection split gate flash EEPROM device programming

Alan Mathewson, Guido Groeseneken, J. Van Houdt, 1992 .

Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes

Liesbet Van der Perre, Francky Catthoor, Guido Groeseneken, 2015, Microprocess. Microsystems.

Statistical aspects of the degradation of LDD nMOSFETs

Guido Groeseneken, Kris Croes, Jan D'Haen, 2002, Microelectron. Reliab..

Investigating ESD sensitivity in electrostatic SiGe MEMS

Mirko Scholz, Dimitri Linten, Sandeep Sangameswaran, 2010 .

Reliability and retention of floating body RAM on bulk FinFET

Eddy Simoen, Guido Groeseneken, Marc Aoulaiche, 2012 .

Reliability challenges of real-time systems in forthcoming technology nodes

Michael Nicolaidis, Guido Groeseneken, Said Hamdioui, 2013, 2013 Design, Automation & Test in Europe Conference & Exhibition (DATE).

System-Level ESD Protection Design Using On-Wafer Characterization and Transient Simulations

Gerd Vandersteen, Mirko Scholz, Shih-Hung Chen, 2014, IEEE Transactions on Device and Materials Reliability.

Process and device design influence on the ESD performance of a fully silicided 0.25mm CMOS technology

Guido Groeseneken, Gonçal Badenes, Ludo Deferm, 1997 .

Significance of the failure criterion on transmission line pulse testing

Guido Groeseneken, M. Natarajan Iyer, Vesselin K. Vassilev, 2002, Microelectron. Reliab..

Basics and applications of charge pumping in submicron MOSFETs© 1997 IEEE. Reprinted, with permission, from Proc. 1997 21st International Conference on Microelectronics, Nis, Yugoslavia, 14–17 September 1997, Vol. 2, pp. 581–589.

Guido Groeseneken, Herman Maes, 1998 .

ESD characterisation of a-IGZO TFTs on Si and foil substrates

Mirko Scholz, Shih-Hung Chen, Dimitri Linten, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors

Naoto Horiguchi, Eddy Simoen, Aaron Thean, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors

Guido Groeseneken, Ajay Bhoolokam, Soeren Steudel, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

HIM0S-a high efficiency flash E/sup 2/PROM cell for embedded memory applications

Guido Groeseneken, Ludo Deferm, Dirk Wellekens, 1993 .

A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions

Guido Groeseneken, Robin Degraeve, Herman Maes, 1996 .

An analytical model for the optimization of source-side injection flash EEPROM devices

Guido Groeseneken, J. Van Houdt, Herman Maes, 1995 .

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2014, Microelectron. Reliab..

Inductor-based ESD protection under CDM-like ESD stress conditions for RF applications

Mirko Scholz, Dimitri Linten, Jonathan Borremans, 2008, 2008 IEEE Custom Integrated Circuits Conference.

FinFET and MOSFET preliminary comparison of gate oxide reliability

Montserrat Nafría, Guido Groeseneken, Ben Kaczer, 2006, Microelectron. Reliab..

Characterization and simulation methodology for time-dependent variability in advanced technologies

Diederik Verkest, Francky Catthoor, Dimitri Linten, 2015, 2015 IEEE Custom Integrated Circuits Conference (CICC).

Early assessment of emerging technologies for VLSI logic circuits from experimental measurements

Guido Groeseneken, Paolo Magnone, Felice Crupi, 2012 .

ESD-RF co-design methodology for the state of the art RF-CMOS blocks

Michiel Steyaert, Steven Thijs, Guido Groeseneken, 2005, Microelectron. Reliab..

Impact of Duty Factor, Stress Stimuli, and Gate Drive Strength on Gate Delay Degradation with an Atomistic Trap-Based BTI Model

Rudy Lauwereins, Liesbet Van der Perre, Francky Catthoor, 2012, 2012 15th Euromicro Conference on Digital System Design.

Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study

Guido Groeseneken, Ben Kaczer, Robin Degraeve, 2002, Microelectron. Reliab..

Positive bias temperature instabilities on sub-nanometer EOT FinFETs

Guido Groeseneken, Moonju Cho, E. San Andrés, 2011, Microelectron. Reliab..

Analysis of short-channel mosfet behavior after gate oxide breakdown and its impact on digital circuit reliability

Guido Groeseneken, Ben Kaczer, Robin Degraeve, 2003 .

A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation

Guido Groeseneken, Jean Manca, Kris Croes, 2001, Microelectron. Reliab..

FinFET technology for analog and RF circuits

Guido Groeseneken, Willy M. C. Sansen, Piet Wambacq, 2007, 2007 14th IEEE International Conference on Electronics, Circuits and Systems.

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes

Guido Groeseneken, Jie Hu, Stefaan Decoutere, 2014, Microelectron. Reliab..

Cost-effective cleaning and high-quality thin gate oxides

Guido Groeseneken, D. Martin Knotter, Tanya Nigam, 1999, IBM J. Res. Dev..

Impact of new technology options on the ESD robustness of sub-45 nm FinFET technology

Natarajan Mahadeva Iyer, Mirko Scholz, Dimitri Linten, 2006 .

A new procedure for lifetime prediction of n-channel MOS-transistors using the charge pumping technique

Guido Groeseneken, H. E. Maes, Paul Heremans, 1988 .

Hot carrier degradation in MOSFETs in the temperature range of 77-300 K

Guido Groeseneken, P. Heremans, R. Bellens, 1991 .

Impacts of process options on ESD device characteristics in sub-20nm bulk FinFET technology nodes

Mirko Scholz, Dimitri Linten, Geert Hellings, 2014 .

Hot carrier stress and breakdown impact on high-frequency MOSFET analog performance

Dominique Schreurs, Guido Groeseneken, B. Kaczer, 2004 .

Identifying the Bottlenecks to the RF Performance of FinFETs

Guido Groeseneken, Willy M. C. Sansen, Morin Dehan, 2010, 2010 23rd International Conference on VLSI Design.

Trends in semiconductor memories

Guido Groeseneken, Herman Maes, H. Lebon, 1989 .

A compact NBTI model for accurate analog integrated circuit reliability simulation

Guido Groeseneken, Jacopo Franco, Georges Gielen, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Methodologies for sub-1nm EOT TDDB evaluation

Guido Groeseneken, Robin Degraeve, Philippe Roussel, 2011, 2011 International Reliability Physics Symposium.

Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks

Naoto Horiguchi, Aaron Thean, Guido Groeseneken, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Impact of CMOS Scaling and Technology Options on ESD Reliability

Natarajan Mahadeva Iyer, Dimitri Linten, Steven Thijs, 2005 .

Teaching nanoscience across scientific and geographical borders – A European Master programme in nanoscience and nanotechnology

Guido Groeseneken, Paul Heremans, Petra Schwille, 2008 .

Will Chips of the Future Learn How to Feel Pain and Cure Themselves?

Francky Catthoor, Guido Groeseneken, F. Catthoor, 2017, IEEE Design & Test.

Analysis of vertical cross-point resistive memory (VRRAM) for 3D RRAM design

Guido Groeseneken, Malgorzata Jurczak, Stefan Cosemans, 2013, 2013 5th IEEE International Memory Workshop.

Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies

Georges G. E. Gielen, Montserrat Nafría, Guido Groeseneken, 2008, 2008 Design, Automation and Test in Europe.

A multi-bit/cell PUF using analog breakdown positions in CMOS

Ingrid Verbauwhede, Dimitri Linten, Guido Groeseneken, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling

Dimitri Linten, Tibor Grasser, Guido Groeseneken, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions

Dimitri Linten, Steven Thijs, Guido Groeseneken, 2006, Microelectron. Reliab..

A CAD assisted design and optimisation methodology for over-voltage ESD protection circuits

Michiel Steyaert, Guido Groeseneken, J.-J. Yang, 2004, Microelectron. Reliab..

Improving workfunction control of metal gate electrodes

Barry O'Sullivan, Guido Groeseneken, Luigi Pantisano, 2006 .

Analysis and modeling of on-chip high-voltage generator circuits for use in EEPROM circuits

Guido Groeseneken, J. S. Witters, Herman Maes, 1989 .

Impact of time-dependent variability on the yield and performance of 6T SRAM cells in an advanced HK/MG technology

Francky Catthoor, Philippe Roussel, Guido Groeseneken, 2015, 2015 International Conference on IC Design & Technology (ICICDT).

Impact of process variability on the radiation-induced soft error rate of decananometer SRAMs in hold and read conditions

Paul Zuber, Dimitri Linten, Eddy Simoen, 2011 .

Scaling of BTI reliability in presence of time-zero variability

Francky Catthoor, Guido Groeseneken, Jacopo Franco, 2014, 2014 IEEE International Reliability Physics Symposium.

Scaling CMOS: Finding the gate stack with the lowest leakage current

Guido Groeseneken, Robin Degraeve, Herman Maes, 2005 .

Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures

Iuliana Radu, Guido Groeseneken, Cedric Huyghebaert, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Dynamic substrate resistance snapback triggering of ESD protection devices

Michiel Steyaert, Guido Groeseneken, H. E. Maes, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

ESD Protection Challenges ‚Äì FinFETs and RF CMOS Circuits

Steven Thijs, Guido Groeseneken, 2010 .

Relation between breakdown mode and location in short-channel nMOSFETs and its impact on reliability specifications

Guido Groeseneken, B. Kaczer, Robin Degraeve, 2001 .

Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current

C. Y. Chen, Guido Groeseneken, Robin Degraeve, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

High frequency characterization and modelling of the parasitic RC performance of two terminal ESD CMOS protection devices

Michiel Steyaert, Steven Thijs, Guido Groeseneken, 2003, Microelectron. Reliab..

A compact model for the grounded-gate nMOS transistor behaviour under CDM ESD stress☆

Philippe Roussel, Guido Groeseneken, Herman Maes, 1998 .

Analysis of the effect of cell parameters on the maximum RRAM array size considering both read and write

Guido Groeseneken, Malgorzata Jurczak, Stefan Cosemans, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Origins and implications of increased channel hot carrier variability in nFinFETs

Naoto Horiguchi, Aaron Thean, Philippe Roussel, 2015, 2015 IEEE International Reliability Physics Symposium.

Comparative experimental analysis of time-dependent variability using a transistor test array

Dimitri Linten, Guido Groeseneken, Jacopo Franco, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Quasi-3D method: Time-efficient TCAD and mixed-mode simulations on finFET technologies

Mirko Scholz, Shih-Hung Chen, Dimitri Linten, 2013, Proceedings of the IEEE 2013 Custom Integrated Circuits Conference.

Grounded-gate nMOS transistor behavior under CDM ESD stress conditions

Guido Groeseneken, Christian Russ, Koen Verhaege, 1997 .

HIMOS: an attractive flash EEPROM cell for embedded memory applications

Guido Groeseneken, H. E. Maes, J. Van Houdt, 1993 .

vfTLP characteristics of ESD devices in Si gate-all-around (GAA) nanowires

Naoto Horiguchi, Mirko Scholz, Shih-Hung Chen, 2016, 2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).

Comparison of Reaction-Diffusion and Atomistic Trap-Based BTI Models for Logic Gates

Francky Catthoor, Guido Groeseneken, Said Hamdioui, 2014, IEEE Transactions on Device and Materials Reliability.

Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements

Massimo Alioto, Naoto Horiguchi, Guido Groeseneken, 2012, IEEE Transactions on Circuits and Systems II: Express Briefs.

Impact of design factors and environment on the ESD sensitivity of MEMS micromirrors

Sandeep Sangameswaran, Guido Groeseneken, Ingrid De Wolf, 2010, Microelectron. Reliab..

Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology

Francky Catthoor, Philippe Roussel, Guido Groeseneken, 2015, 2015 IEEE International Reliability Physics Symposium.

BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic

Tibor Grasser, Guido Groeseneken, Felice Crupi, 2012, Microelectron. Reliab..

Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions

Philippe Roussel, Guido Groeseneken, Koen Martens, 2015, 2015 IEEE International Reliability Physics Symposium.

Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps

Dimitri Linten, Guido Groeseneken, Jacopo Franco, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Investigation of the endurance of FE-HfO2 devices by means of TDDB studies

A. Subirats, Guido Groeseneken, Ben Kaczer, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

RF/High-Speed I/O ESD Protection: Co-optimizing Strategy Between BEOL Capacitance and HBM Immunity in Advanced CMOS Process

Dimitri Linten, Guido Groeseneken, Ming-Dou Ker, 2020, IEEE Transactions on Electron Devices.

The impact of process variation and stochastic aging in nanoscale VLSI

Francky Catthoor, Guido Groeseneken, Saman Kiamehr, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015, 2015 IEEE International Reliability Physics Symposium.

Reliability screening of high-k dielectrics based on voltage ramp stress

Anabela Veloso, Guido Groeseneken, Luigi Pantisano, 2007, Microelectron. Reliab..

Editorial

A. J. Mouthaan, Guido Groeseneken, Ingrid De Wolf, 1996, Microelectron. Reliab..

CDM protection for millimeter-wave circuits

Dimitri Linten, Ming-Hsiang Song, Jen-Chou Tseng, 2011, EOS/ESD Symposium Proceedings.

Energy distribution of positive charges in high-k dielectric

Zhigang Ji, Guido Groeseneken, Ben Kaczer, 2014, Microelectron. Reliab..

Local CDM ESD Protection Circuits for Cross-Power Domains in 3D IC Applications

Mirko Scholz, Shih-Hung Chen, Dimitri Linten, 2014, IEEE Transactions on Device and Materials Reliability.

Dynamic substrate resistance snapback of ESD protection devices

Michel Steyaert, Guido Groeseneken, Herman Maes, 2003 .

Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology

Liesbet Van der Perre, Guido Groeseneken, Ben Kaczer, 2014, Fifteenth International Symposium on Quality Electronic Design.

Simulation study for the CDM ESD behaviour of the grounded-gate NMOS

Guido Groeseneken, Herman Maes, C. Russ, 1996 .

Voltage variant source side injection for multilevel charge storage in flash EEPROM

Guido Groeseneken, Dirk Wellekens, J. Van Houdt, 1997 .

A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF

Ingrid Verbauwhede, Dimitri Linten, Guido Groeseneken, 2018, IACR Trans. Cryptogr. Hardw. Embed. Syst..

Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability

Guido Groeseneken, Zsolt Tokei, Karen Maex, 2005, Microelectron. Reliab..

Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications

Naoto Horiguchi, Geert Hellings, Liesbeth Witters, 2012, 2012 IEEE International Conference on IC Design & Technology.

A 1.3dB NF CMOS LNA for GPS with 3kV HBM ESD–protection

Paul Leroux, Michiel Steyaert, Guido Groeseneken, 2002 .

The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits

Dimitri Linten, Philippe Roussel, Tibor Grasser, 2016 .

Reliability of SiGe channel MOS

Geert Hellings, Jerome Mitard, Liesbeth Witters, 2012 .

ESD characterization of planar InGaAs devices

X. Zhang, Dimitri Linten, Geert Hellings, 2015, 2015 IEEE International Reliability Physics Symposium.

Evidence for source side injection hot carrier effects on lateral DMOS transistors

Geert Van den bosch, Guido Groeseneken, P. Gassot, 2004, Microelectron. Reliab..

Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability

Philippe Roussel, Guido Groeseneken, Ben Kaczer, 2007, Microelectron. Reliab..

ESD protection methodology for deep-sub-micron CMOS

Guido Groeseneken, Karlheinz Bock, Herman Maes, 1998 .

From planar to vertical capacitors: A step towards ferroelectric V-FeFET integration

Guido Groeseneken, Simone Lavizzari, Tom Raymaekers, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique

Guido Groeseneken, W. De Ceuninck, L. De Schepper, 1999 .

Smart-array for pipelined BTI characterization

Diederik Verkest, Dimitri Linten, Guido Groeseneken, 2015, 2015 IEEE International Integrated Reliability Workshop (IIRW).

Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs

Naoto Horiguchi, Cor Claeys, Eddy Simoen, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Recent trends in the electrical characterization and reliability assessment of CMOS devices

Philippe Roussel, Guido Groeseneken, Jacopo Franco, 2012 .

Gated and STI defined ESD diodes in advanced bulk FinFET technologies

Guido Groeseneken, G. Hellings, D. Linten, 2014, 2014 IEEE International Electron Devices Meeting.

Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits

Tibor Grasser, Guido Groeseneken, Ben Kaczer, 2014, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase

Anabela Veloso, Guido Groeseneken, Ben Kaczer, 2007, Microelectron. Reliab..

Process Options Impact on ESD Diode Performance in Bulk FinFET Technology

Shih-Hung Chen, Dimitri Linten, Geert Hellings, 2016, IEEE Transactions on Electron Devices.

On gated diodes for ESD protection in bulk FinFET CMOS technology

Shih-Hung Chen, Dimitri Linten, Steven Thijs, 2011, EOS/ESD Symposium Proceedings.

NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures

Naoto Horiguchi, Aaron Thean, Philippe Roussel, 2015, 2015 IEEE International Reliability Physics Symposium.

Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling

Guido Groeseneken, Stefan De Gendt, Marc Aoulaiche, 2007, Microelectron. Reliab..

Influence of gate length on ESD-performance for deep sub micron CMOS technology

Guido Groeseneken, Karlheinz Bock, A. Naem, 1999, Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 1999 (IEEE Cat. No.99TH8396).

A plug-and-play wideband RF circuit ESD protection methodology: T-diodes

Mirko Scholz, Dimitri Linten, Jonathan Borremans, 2009, Microelectron. Reliab..

A CMOS circuit for evaluating the NBTI over a wide frequency range

Guido Groeseneken, Ben Kaczer, R. Fernández-García, 2009, Microelectron. Reliab..

Full ($V_{\mathrm{g}},\ V_{\mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs

Dimitri Linten, Guido Groeseneken, Ben Kaczer, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors

Aaron Thean, Guido Groeseneken, Nadine Collaert, 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC).

The properties, effect and extraction of localized defect profiles from degraded FET characteristics

Guido Groeseneken, Jacopo Franco, Ben Kaczer, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Integration of GaN analog building blocks on p-GaN wafers for GaN ICs

Guido Groeseneken, Niels Posthuma, Stefaan Decoutere, 2021 .

Physics-based device aging modelling framework for accurate circuit reliability assessment

Dimitri Linten, Philippe Roussel, Guido Groeseneken, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics

Guido Groeseneken, Calogero Pace, Marc Aoulaiche, 2005 .

Basics and applications of charge pumping in submicron MOSFET's

Guido Groeseneken, Herman Maes, 1997, 1997 21st International Conference on Microelectronics. Proceedings.

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

Guido Groeseneken, Robin Degraeve, R. Bellens, 1998 .

Analysis of mechanisms for the enhanced degradation during AC hot carrier stress of MOSFETs

Guido Groeseneken, P. Heremans, Herman Maes, 1988, Technical Digest., International Electron Devices Meeting.

Continuing degradation of the SiO2/Si interface after hot hole stress

Guido Groeseneken, I. S. Al-Kofahi, Jenny Zhang, 1997 .

Modeling the Impact of Reset Depth on Vacancy-Induced Filament Perturbations in ${\rm HfO}_{2}$ RRAM

Guido Groeseneken, Robin Degraeve, Malgorzata Jurczak, 2013, IEEE Electron Device Letters.

Can p-channel tunnel-field-effect transistors perform as good as n-channel tunnel-FETs?

Aaron Thean, Guido Groeseneken, Nadine Collaert, 2014 .

Toward a streamlined projection of small Device BTI lifetime distributions

Philippe Roussel, Tibor Grasser, Guido Groeseneken, 2012 .

Characterization of individual interface traps with charge pumping

Guido Groeseneken, Nelson S. Saks, I. DeWolf, 1996 .

Origin of substrate hole current after gate oxide breakdown

Guido Groeseneken, Robin Degraeve, Ingrid De Wolf, 2002 .

Impact of Wire Geometry on Interconnect RC and Circuit Delay

Diederik Verkest, Christopher J. Wilson, Aaron Thean, 2016, IEEE Transactions on Electron Devices.

Determination of spatial surface state density distribution in MOS and SIMOS transistors after channel hot electron injection

Guido Groeseneken, H. E. Maes, 1982 .

Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

Guido Groeseneken, Luigi Pantisano, Tom Schram, 2006 .

Ultra-thin oxide reliability: searching for the thickness scaling limit

Guido Groeseneken, Ben Kaczer, Robin Degraeve, 2000 .

Short Note: Poly-Si heaters for ultra-fast local temperature control of on-wafer test structures

Guido Groeseneken, Jacopo Franco, B. Kaczer, 2014 .

Characterization of Germanium ESD devices

Dionyz Pogany, Mirko Scholz, Dimitri Linten, 2014 .

Investigation and Comparison of the Noise in the Gate and Substrate Current after Soft-Breakdown

Guido Groeseneken, Felice Crupi, Tanya Nigam, 1999 .

Electrical characterization of advanced gate dielectrics

Eddy Simoen, Guido Groeseneken, Ben Kaczer, 2007 .

Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETs

Jerome Mitard, Anabela Veloso, Guido Groeseneken, 2009 .

Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Guido Groeseneken, Robin Degraeve, Malgorzata Jurczak, 2015 .

New Analysis Method for Time-Dependent Device-To-Device Variation Accounting for Within-Device Fluctuation

Asen Asenov, Guido Groeseneken, Ben Kaczer, 2013, IEEE Transactions on Electron Devices.

Impact of the Substrate Orientation on CHC Reliability in n-FinFETs—Separation of the Various Contributions

Naoto Horiguchi, Guido Groeseneken, Felice Crupi, 2014, IEEE Transactions on Device and Materials Reliability.

Energy Distribution of Positive Charges in ${\rm Al}_{2}{\rm O}_{3}{\rm GeO}_{2}/{\rm Ge}$ pMOSFETs

Jerome Mitard, Guido Groeseneken, Ben Kaczer, 2014, IEEE Electron Device Letters.

Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2

Iuliana Radu, Guido Groeseneken, Shinji Miwa, 2017 .

Figure of merit for and identification of sub-60 mV/decade devices

Guido Groeseneken, Marc Heyns, Massimo V. Fischetti, 2013 .

Electrical properties of Al2O3/ZrO2/Al2O3 gate stack in p-substrate metal oxide semiconductor devices

Guido Groeseneken, Ben Kaczer, Stefan De Gendt, 2003 .

A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors

Guido Groeseneken, Wim Magnus, Kristin De Meyer, 2012 .

Analysis of HBM ESD testers and specifications using a fourth-order lumped element model

Guido Groeseneken, Christian Russ, Herman Maes, 1994 .

Thermal stability analysis and modelling of advanced perpendicular magnetic tunnel junctions

Dimitri Linten, Philippe Roussel, Guido Groeseneken, 2018 .

NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling

Dimitri Linten, Guido Groeseneken, Jacopo Franco, 2017, IEEE Transactions on Electron Devices.

Tunnel Field-Effect Transistors for Future Low-Power Nano-Electronics

Rita Rooyackers, Anne Vandooren, Guido Groeseneken, 2009 .

A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

Guido Groeseneken, Robin Degraeve, Herman Maes, 1995, Proceedings of International Electron Devices Meeting.

Hot-carrier degradation behavior of N- and P-channel MOSFET's under dynamic operation conditions

Guido Groeseneken, P. Heremans, Herman Maes, 1994 .

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Exploring ESD challenges in sub-20-nm bulk FinFET CMOS technology nodes

Mirko Scholz, Dimitri Linten, Geert Hellings, 2013, 2013 35th Electrical Overstress/Electrostatic Discharge Symposium.

P-6: Impact of Buffer Layers on the Self-Aligned Top-Gate a-IGZO TFT Characteristics

Kris Myny, Guido Groeseneken, Steve Smout, 2015 .

Hot carrier degradation and time-dependent dielectric breakdown in oxides

Guido Groeseneken, Tanya Nigam, Robin Degraeve, 1999 .

Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs

Luigi Dilillo, Dimitri Linten, Eddy Simoen, 2012, IEEE Transactions on Nuclear Science.

Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes

Philippe Roussel, Guido Groeseneken, Luigi Pantisano, 2003 .

Uniform Strain in Heterostructure Tunnel Field-Effect Transistors

Aaron Thean, Guido Groeseneken, Nadine Collaert, 2016, IEEE Electron Device Letters.

A Study of Relaxation Current in

Guido Groeseneken, Luigi Pantisano, Marc Heyns, 2004 .

Significant reduction of Positive Bias Temperature Instability in high-k/metal-gate nFETs by incorporation of rare earth metals

Anabela Veloso, Guido Groeseneken, Ben Kaczer, 2009 .

How far can we analyze oxide traps spatially with charge injection techniques

Philippe Roussel, Guido Groeseneken, Ben Kaczer, 2008 .

System-level ESD protection of high-voltage tolerant IC pins – A case study

Gerd Vandersteen, Mirko Scholz, Dimitri Linten, 2011 .

Hot-Carrier Degradation During Dynamic Stress

Guido Groeseneken, Paul Heremans, Werner Weber, 1992 .

Impact of halo implant on the hot carrier reliability of germanium p-channel metal-oxide-semiconductor field-effect transitors

Jerome Mitard, Guido Groeseneken, Jacopo Franco, 2011 .

The influence of the measurement setup on enhanced AC hot carrier degradation of MOSFETs

Guido Groeseneken, Paul Heremans, Herman Maes, 1990 .

Electron energy dependence of defect generation in high-k gate stacks

Guido Groeseneken, Ben Kaczer, Luigi Pantisano, 2008 .

Mechanism for the generation of interface state precursors

Guido Groeseneken, Robin Degraeve, Jenny Zhang, 2000 .

Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors

Guido Groeseneken, P. Heremans, Herman Maes, 1991 .

Area scaling and voltage dependence of time-to-breakdown in magnetic tunnel junctions

Philippe Roussel, Guido Groeseneken, Robin Degraeve, 2002 .

Anomalous positive-bias temperature instability of high-κ/metal gate devices with Dy2O3 capping

Guido Groeseneken, Luigi Pantisano, Marc Aoulaiche, 2008 .

Filament observation in metal-oxide resistive switching devices

Guido Groeseneken, Dirk Wouters, Wilfried Vandervorst, 2013 .

Fabrication and Analysis of a Heterojunction Line Tunnel FET

Rita Rooyackers, Anne Vandooren, Aaron Thean, 2014 .

NMOS transistor behaviour under CDM stress conditions and relation to other ESD models

Guido Groeseneken, Christian Russ, J.R.M. Luchies, 1995 .

A study of breakdown mechanisms in electrostatic actuators using mechanical response under EOS-ESD stress

Mirko Scholz, Dimitri Linten, Sandeep Sangameswaran, 2009, 2009 31st EOS/ESD Symposium.

Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications

Guido Groeseneken, Christoph Adelmann, Malgorzata Jurczak, 2014, IEEE Electron Device Letters.

On-wafer human metal model ‚Äì system-level ESD stress on component level

Mirko Scholz, Dimitri Linten, M. Sawada, 2008 .

Study of leakage mechanism and trap density in porous low-k materials

Guido Groeseneken, Larry Zhao, Zsolt Tokei, 2010, 2010 IEEE International Reliability Physics Symposium.

Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric

Guido Groeseneken, Robin Degraeve, Xavier Aymerich, 2010 .

Single poly cell as the best choice for radiation-hard floating gate EEPROM technology

Guido Groeseneken, Dirk Wellekens, J. Van Houdt, 1993 .

Evaluation of channel hot carrier effects in n-mos transistors at 77-k with the charge pumping technique

Guido Groeseneken, Paul Heremans, H. E. Maes, 1987 .

On the interface states generated under different stress conditions

David R. Burton, Michael J. Lalor, Guido Groeseneken, 2001 .

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2015 .

Influence of gate length on ESD-performance for deep sub micron CMOS technology

Guido Groeseneken, B. Keppens, A. Naem, 1999 .

Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET's

Guido Groeseneken, P. Heremans, Herman Maes, 1990 .

Interface state generation after hole injection

Guido Groeseneken, Robin Degraeve, Chun Zhao, 2001 .

Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics

Guido Groeseneken, Gustaaf Borghs, Herman Maes, 2007 .

Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2018, IEEE Electron Device Letters.

Relation between hydrogen and the generation of interface state precursors

Guido Groeseneken, Robin Degraeve, Jenny Zhang, 1999 .

Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection

Guido Groeseneken, Luigi Pantisano, Robin Degraeve, 2007 .

Analysis of high voltage TDDB measurements on Ta2O5/SiO2 stack

Guido Groeseneken, Ben Kaczer, Marc Heyns, 1999 .

Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

Guido Groeseneken, Robin Degraeve, Xavier Aymerich, 2010 .

Neutron-induced failure in super-junction, IGBT, and SiC power devices

Luigi Dilillo, Dimitri Linten, Eddy Simoen, 2011, 2011 12th European Conference on Radiation and Its Effects on Components and Systems.

Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits

Francky Catthoor, Guido Groeseneken, Jacopo Franco, 2014, IEEE Transactions on Electron Devices.

Statistical model for SILC and pre-breakdown current jumps in ultra-thin oxide layers

Guido Groeseneken, Ben Kaczer, Robin Degraeve, 2001 .

Analytical model for anomalous Positive Bias Temperature Instability in La-based HfO2 nFETs based on independent characterization of charging components

Aaron Thean, Guido Groeseneken, Ben Kaczer, 2013 .

Impact of process variability on the radiation-induced soft error of nanometer-scale srams in hold and read conditions

Paul Zuber, Dimitri Linten, Eddy Simoen, 2011, 2011 12th European Conference on Radiation and Its Effects on Components and Systems.

Characteristics improvement of top‐gate self‐aligned amorphous indium gallium zinc oxide thin‐film transistors using a dual‐gate control

Kris Myny, Guido Groeseneken, Soeren Steudel, 2017 .

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015 .

Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs

Rita Rooyackers, Anne Vandooren, Guido Groeseneken, 2013 .

Modeling the impact of junction angles in tunnel field-effect transistors

Guido Groeseneken, Kristin De Meyer, Anne S. Verhulst, 2012 .

Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices

S. Decoutere, Guido Groeseneken, Paolo Magnone, 2008 .

Two types of neutral electron traps generated in the gate silicon dioxide

David R. Burton, Guido Groeseneken, Robin Degraeve, 2002 .

A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides

Guido Groeseneken, Herman Maes, G. Groeseneken, 1996 .

Impact of fin width on digital and analog performances of n-FinFETs

Willy Sansen, S. Decoutere, Guido Groeseneken, 2007 .

A simple, cost effective and very sensitive alternative for photon emission spectroscopy

Guido Groeseneken, Ingrid De Wolf, Herman Maes, 1997 .

NBTI Reliability of SiGe and Ge Channel pMOSFETs With $ \hbox{SiO}_{2}/\hbox{HfO}_{2}$ Dielectric Stack

Jerome Mitard, Liesbeth Witters, Tibor Grasser, 2013, IEEE Transactions on Device and Materials Reliability.

Electrical and reliability characterization of metal-gate/HfO2/Ge FET's with Si passivation

Guido Groeseneken, Ben Kaczer, Robin Degraeve, 2007 .

An inelastic quantum tunnelling model for current conduction after soft-breakdown

Guido Groeseneken, Felice Crupi, Tanya Nigam, 1998 .

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2016, IEEE Transactions on Electron Devices.

Negative Bias Temperature Instability in (Si)Ge pMOSFETs

Guido Groeseneken, Jacopo Franco, Ben Kaczer, 2014 .

Fast $V_{\rm TH}$ Transients After the Program/Erase of Flash Memory Stacks With High-$k$ Dielectrics

Guido Groeseneken, Ben Kaczer, Robin Degraeve, 2011, IEEE Transactions on Electron Devices.

Analysis of the enhanced hot-electron injection in split-gate transistors useful for EEPROM applications

Guido Groeseneken, Ludo Deferm, J. Van Houdt, 1992 .

Hydrogen induced positive charge generation in gate oxides

Guido Groeseneken, Robin Degraeve, Jian Fu Zhang, 2001 .

Strong correlation between dielectric reliability and charge trapping in SiO2/Al2O3 gate stacks with TiN electrodes

Philippe Roussel, Guido Groeseneken, Luigi Pantisano, 2002 .

Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current

Giuseppe Iannaccone, Guido Groeseneken, Felice Crupi, 2001 .

Charge trapping in SiO 2 /HfO 2 gate dielectrics: comparison between charge-pumping and pulsed I D -V G

Guido Groeseneken, Luigi Pantisano, Robin Degraeve, 2004 .

Optimization of FinFET geometries for analog performance

Willy Sansen, Guido Groeseneken, Nadine Collaert, 2006 .

On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs

Jerome Mitard, Liesbeth Witters, Tibor Grasser, 2011 .

Quantum mechanical solver for confined heterostructure tunnel field-effect transistors

Aaron Thean, Guido Groeseneken, Nadine Collaert, 2014 .

Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress

Tibor Grasser, Guido Groeseneken, Jacopo Franco, 2011 .

Novel Device Concepts for Nanotechnology: The Nanowire Pinch-Off FET and Graphene TunnelFET

Guido Groeseneken, Marc Heyns, Wim Magnus, 2010 .

200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2017, IEEE Electron Device Letters.

Understanding of the Hot-Carrier Degradation in Submicron MOSFET's : From Uniform Injection towards the Real Operating Conditions

Guido Groeseneken, Herman Maes, R. Bellens, 1994 .

Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

Guido Groeseneken, Ben Kaczer, Robin Degraeve, 1999 .

Correlation between charge Injection and trapping in SiO2/HfO2 gate stacks

Guido Groeseneken, Luigi Pantisano, Eduard A. Cartier, 2003 .

Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs

Rita Rooyackers, Anne Vandooren, Guido Groeseneken, 2012 .

High-drive current (>1MA/cm2) and highly nonlinear (>103) TiN/amorphous-Silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance

Guido Groeseneken, Christoph Adelmann, Malgorzata Jurczak, 2014, 2014 IEEE International Electron Devices Meeting.

Correlation between 1/f noise and interface state density at the Fermi level in field‐effect transistors

Guido Groeseneken, Herman Maes, G. Groeseneken, 1985 .

Influence Of Well Profile And Gate Length On The ESD Performance Of A Fully Silicided 0.25/spl mu/m Cmos Technology

Guido Groeseneken, Ludo Deferm, Christian Russ, 1997 .

Performance and reliability aspects of FOND: a new deep submicron CMOS device concept

P. Habas, Guido Groeseneken, Ludo Deferm, 1996 .

Interface Trap Characterization and Fermi Level Pinning in Si-Passivated Ge/HfO2 Capacitors

Philippe Roussel, Guido Groeseneken, Ben Kaczer, 2006 .

Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements

Eddy Simoen, Guido Groeseneken, Herman Maes, 2006 .

The effect of externally imposed mechanical stress on the hot-carrier-induced degradation of deep-sub micron nMOSFET's

Guido Groeseneken, Robin Degraeve, I. De Wolf, 1997 .

ESD performance of high mobility SiGe quantum well bulk finFET diodes and PMOS devices

Mirko Scholz, Dimitri Linten, Geert Hellings, 2013, 2013 35th Electrical Overstress/Electrostatic Discharge Symposium.

Determining weak Fermi-level pinning in MOS devices by conductance and capacitance analysis and application to GaAs MOS devices

Guido Groeseneken, Gustaaf Borghs, Herman Maes, 2007 .

Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs

Dimitri Linten, Guido Groeseneken, Ben Kaczer, 2018, 2018 International Integrated Reliability Workshop (IIRW).

Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors

Naoto Horiguchi, Aaron Thean, Guido Groeseneken, 2013 .

Toward a streamlined projection of small device bias temperature instability lifetime distributions

Philippe Roussel, Tibor Grasser, Guido Groeseneken, 2013 .

On the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

Guido Groeseneken, Robin Degraeve, Herman Maes, 1996, Proceedings of International Reliability Physics Symposium.

On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors

Guido Groeseneken, Paul Heremans, Herman Maes, 1994 .

High k dielectric materials prepared by atomic layer CVD

Richard Carter, Guido Groeseneken, Wilfried Vandervorst, 2001 .

Investigation of Bias-Temperature Instability in work-function-tuned high-k/metal-gate stacks

Anabela Veloso, Philippe Roussel, Tibor Grasser, 2009 .

On the mechanism of electron trap generation in gate oxides

David R. Burton, Michael J. Lalor, Guido Groeseneken, 2001 .

On the Optimal ON/OFF Resistance Ratio for Resistive Switching Element in One-Selector One-Resistor Crosspoint Arrays

Guido Groeseneken, Malgorzata Jurczak, Stefan Cosemans, 2015, IEEE Electron Device Letters.

Hf Cap Thickness Dependence in Bipolar-Switching TiN\HfO2\Hf\TiN RRAM Device

Guido Groeseneken, Dirk Wouters, Malgorzata Jurczak, 2013 .

Effects of detrapping on electron traps generated in gate oxides

David R. Burton, Michael J. Lalor, Guido Groeseneken, 2003 .

Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects

Guido Groeseneken, Marc Heyns, Stefan De Gendt, 2011, Nanotechnology.

Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs

Naoto Horiguchi, Philippe Roussel, Guido Groeseneken, 2013, IEEE Transactions on Electron Devices.

Dependence of energy distributions of interface states on stress conditions

David R. Burton, Guido Groeseneken, Robin Degraeve, 2001 .

Part II: Investigation of Subthreshold Swing in Line Tunnel FETs Using Bias Stress Measurements

Rita Rooyackers, Eddy Simoen, Anne Vandooren, 2013, IEEE Transactions on Electron Devices.

On the breakdown statistics and mechanisms in ultra-thin oxides and nitrided oxides

Guido Groeseneken, Robin Degraeve, Herman Maes, 1997 .

A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

Guido Groeseneken, Robin Degraeve, Xavier Aymerich, 2013 .

BTI reliability of InGaAs nMOS gate-stack: On the impact of shallow and deep defect bands on the operating voltage range of III-V technology

Dimitri Linten, Guido Groeseneken, Jacopo Franco, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique

Eddy Simoen, Philippe Roussel, Guido Groeseneken, 2010 .

Critical analysis of the substrate hot-hole injection technique

Geert Van den bosch, Guido Groeseneken, Herman Maes, 1994 .

On the Apparent Non-Arrhenius Temperature Dependence of Charge Trapping in IIIV/High- ${k}$ MOS Stack

Dimitri Linten, Guido Groeseneken, Jacopo Franco, 2018, IEEE Transactions on Electron Devices.

Internal photoemission of electrons at interfaces of metals with low-κ insulators

Guido Groeseneken, Karen Maex, Andre Stesmans, 2006 .

Part I: Impact of Field-Induced Quantum Confinement on the Subthreshold Swing Behavior of Line TFETs

Eddy Simoen, Anne Vandooren, Guido Groeseneken, 2013, IEEE Transactions on Electron Devices.

Issues, achievements and challenges towards integration of high-k dielectrics

Richard Carter, Guido Groeseneken, L. Pantisano, 2002 .

Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks

Guido Groeseneken, Marc Aoulaiche, S. De Gendt, 2005 .

Drain voltage dependent analytical model of tunnel field-effect transistors

Rita Rooyackers, Guido Groeseneken, Daniele Leonelli, 2011 .

Assessment of oxide reliability and hot carrier degradation in CMOS technology

Guido Groeseneken, Robin Degraeve, Herman Maes, 1998 .

Reliable Time Exponents for Long Term Prediction of Negative Bias Temperature Instability by Extrapolation

Dimitri Linten, Guido Groeseneken, Jacopo Franco, 2017, IEEE Transactions on Electron Devices.

Trends and Challenges in Si and Hetero-Junction Tunnel Field Effect Transistors

Cor Claeys, Rita Rooyackers, Anne Vandooren, 2011 .

Silicide Engineering to Boost Si Tunnel Transistor Drive Current

Rita Rooyackers, Anne Vandooren, Guido Groeseneken, 2011 .

Determination of capture cross sections for as-grown electron traps in HfO2∕HfSiO stacks

Guido Groeseneken, Jian Fu Zhang, Bogdan Govoreanu, 2006 .

Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

Guido Groeseneken, Stefaan Decoutere, Brice De Jaeger, 2014 .

Oxygen chemical potential optimization for low current (<10µA) resistive switching in oxide-based RRAM

Guido Groeseneken, Malgorzata Jurczak, Andrea Fantini, 2016 .

Characterization of front and back Si-SiO/sub 2/ interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping technique

Guido Groeseneken, C. Claeys, Dirk Wouters, 1989 .

Observation of single interface traps in submicron MOSFET's by charge pumping

Guido Groeseneken, I. De Wolf, Herman Maes, 1996 .

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Guido Groeseneken, Jacopo Franco, Ben Kaczer, 2013 .

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Guido Groeseneken, Stefaan Decoutere, Benoit Bakeroot, 2015 .

Investigation of temperature acceleration of thin oxide time-to-breakdown

Guido Groeseneken, Ben Kaczer, Tanya Nigam, 1999 .

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, IEEE Transactions on Electron Devices.

Impact of Si-passivation thickness and processing on NBTI reliability of Ge and SiGe pMOSFETs

Jerome Mitard, Tibor Grasser, Guido Groeseneken, 2009 .

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Guido Groeseneken, Niels Posthuma, Denis Marcon, 2015, IEEE Electron Device Letters.

Generation of hole traps in silicon dioxides

Guido Groeseneken, R. Degraeve, H. K. Sii, 2001, Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548).

VFTLP characteristics of ESD protection diodes in advanced bulk FinFET technology

Mirko Scholz, Dimitri Linten, Geert Hellings, 2015, 2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).

Statistical insight into controlled forming and forming free stacks for HfOx RRAM

Guido Groeseneken, Dirk Wouters, Robin Degraeve, 2013 .

A model study of the hot-carrier problem in LDD and overlapped LDD MOSFETs

P. Habas, Guido Groeseneken, R. Bellens, 1995 .

Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests

Guido Groeseneken, Ben Kaczer, Denis Marcon, 2017, IEEE Electron Device Letters.

Channel hot electron injection versus Fowler-Nordheim tunneling for multilevel charge storage in non-volatile memories

Guido Groeseneken, Dirk Wellekens, Paul Hendrickx, 1997 .

Relation between hole traps and hydrogenous species in silicon dioxides

Guido Groeseneken, Robin Degraeve, H. K. Sii, 2002 .

Electrical Defects in Dielectrics for Flash Memories Studied by Trap Spectroscopy by Charge Injection and Sensing (TSCIS)

Geert Van den bosch, Guido Groeseneken, Ben Kaczer, 2009 .

Understanding of the hot carrier degradation behaviour of MOSFET's by means of the charge pumping technique

Guido Groeseneken, Paul Heremans, R. Bellens, 1989 .

A high resolution method for measuring hot carrier degradation in matched transistor pairs

Guido Groeseneken, W. De Ceuninck, L. De Schepper, 1997 .

Geometry Dependence of 1/f Noise in n‐ and p‐channel MuGFETs

Willy Sansen, S. Decoutere, Guido Groeseneken, 2005 .

Comparative study of source–drain contact metals for amorphous InGaZnO thin-film transistors

Guido Groeseneken, Ajay Bhoolokam, Soeren Steudel, 2014 .

Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

Ru Huang, Wim Dehaene, Guido Groeseneken, 2011 .

Gate voltage dependence of reliability for ultra-thin oxides

Guido Groeseneken, Tanya Nigam, Marc Heyns, 1997 .

Weibull slope and voltage acceleration of ultra-thin (1.1-1.45 nm EOT) oxynitrides

Anabela Veloso, Guido Groeseneken, Ben Kaczer, 2004 .

Spectroscopic study of polysilicon traps by means of fast capacitance transients

Eddy Simoen, Guido Groeseneken, Ben Kaczer, 2013 .

Dielectric quality and reliability of FUSI/HfSiON devices with process induced strain

Eddy Simoen, Guido Groeseneken, Ben Kaczer, 2007 .

Hole Trapping and Trap Generation in the Gate

Guido Groeseneken, Robin Degraeve, Jian Fu Zhang, 2001 .

Analysis of the kinetics for interface state generation following hole injection

Guido Groeseneken, Robin Degraeve, Jian Fu Zhang, 2003 .

Improved PBTI reliability in junction-less nFET fabricated at low thermal budget for 3D Sequential Integration

Dimitri Linten, Anne Vandooren, Philippe Roussel, 2018, 2018 International Integrated Reliability Workshop (IIRW).

Extraction of the Random Component of Time-Dependent Variability Using Matched Pairs

Naoto Horiguchi, Tibor Grasser, Guido Groeseneken, 2015, IEEE Electron Device Letters.

Contribution of fast and slow states to Negative Bias Temperature Instabilities in HfxSi(1-x )ON/TaN based pMOSFETs

Guido Groeseneken, Marc Heyns, Marc Aoulaiche, 2005 .

Influence of absorbed water components on SiOCH low-k reliability

Guido Groeseneken, Karen Maex, Ivan Ciofi, 2008 .

On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers

Guido Groeseneken, Felice Crupi, Tanya Nigam, 1998 .

Influence of well profile and gate length on the ESD performance of a fully silicided 0.25 μm CMOS technology

Guido Groeseneken, Ludo Deferm, Christian Russ, 1998, IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part C.

Stress polarity dependence of degradation and breakdown of SiO/sub 2//high-k stacks

Philippe Roussel, Guido Groeseneken, B. Kaczer, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Impact of the Low Temperature Gate Dielectrics on Device Performance and Bias-Stress Stabilities of a-IGZO Thin-Film Transistors

Guido Groeseneken, Ajay Bhoolokam, Soeren Steudel, 2015 .

Accurate reliability evaluation of non-uniform ultrathin oxynitride and high-k layers

Philippe Roussel, Guido Groeseneken, Luigi Pantisano, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Guido Groeseneken, Denis Marcon, Marleen Van Hove, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Characteristics and Correlated Fluctuations of the Gate and Substrate Current after Oxide Soft-Breakdown

Guido Groeseneken, Felice Crupi, Tanya Nigam, 1998 .

Impact of process conditions on interface and high-κ trap density studied by variable Tcharge-Tdischarge charge pumping (VT2CP)

Guido Groeseneken, Robin Degraeve, M. B. Zahid, 2007 .

Impact of field-induced quantum confinement in tunneling field-effect devices

Guido Groeseneken, Massimo V. Fischetti, Wim Magnus, 2011 .

A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes

Guido Groeseneken, Felice Crupi, B. Kaczer, 2003 .

ESD issues in MEMS: A case study in micromirrors

Chris Van Hoof, J. De Coster, Mirko Scholz, 2008 .

Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors

Aaron Thean, Guido Groeseneken, Nadine Collaert, 2015 .