H. Xu

发表

Effect of Grinding-Induced Stress on Interface State Density of SiC/SiO2

J. Ao, Shijian Wang, Shi Hai Wang, 2019, Materials Science Forum.

Effects of sequential annealing in low oxygen partial-pressure and NO on 4H-SiC MOS devices

Zhi Jin, Caiping Wan, H. Xu, 2020 .

Effect of pulsed UV laser irradiation on 4H-SiC MOS with thermal gate oxide

Zhi Jin, F. Zhao, Caiping Wan, 2020, Journal of Materials Science: Materials in Electronics.

Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure

J. Ao, L. Sang, Caiping Wan, 2019, Journal of Crystal Growth.

Role of Ti and W in the Ni-based ohmic contacts to n-type 4H-SiC

Caiping Wan, H. Xu, Zhichun Jin, 2023, Journal of Crystal Growth.

Al(ON) gate dielectrics for 4H-SiC MOS devices

Fei Yang, Caiping Wan, H. Xu, 2020 .

Investigation of Ni/Al/Ti Ohmic Contact on N-Type 4H-SiC

Mengwei Xue, Caiping Wan, H. Xu, 2021, Materials Science Forum.

Factors Affecting Bias Temperature Instability in 4H-SiC MOS Capacitors

Caiping Wan, H. Xu, Niannian Ge, 2023, Key Engineering Materials.

Ultrahigh-temperature oxidation of 4H-SiC (0 0 0 1) and gate oxide reliability dependence on oxidation temperature

J. Xia, J. Ao, Caiping Wan, 2020 .

The Improvement of Ohmic Contacts Property in P-Type 4H-SiC LDMOSFET Using Ti(20 nm)/Al(30 nm) Electrodes

Zhi Jin, Jinbiao Liu, Xinyu Liu, 2015 .

The Gate Oxide Breakdown Failures of 4H-SiC MOS Devices

T. Ye, Caiping Wan, H. Xu, 2023, Key Engineering Materials.

Improving the reliability of MOS capacitor on 4H-SiC (0001) with phosphorus diffused polysilicon gate

Tianchun Ye, Caiping Wan, H. Xu, 2022, Semiconductor Science and Technology.

Influence of phosphorus diffusion on the SiO2/4H-SiC (0001) interface during poly gate formation process

Tianchun Ye, Caiping Wan, H. Xu, 2021, Microelectronics Reliability.

Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing

J. Ao, Caiping Wan, H. Xu, 2019, Materials Science Forum.

The effects of stress on interfacial properties and flatband voltage instability of 4H-SiC MOS structures

Tianchun Ye, Caiping Wan, H. Xu, 2023, Microelectronics Reliability.

The Correlation between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions

J. Ao, Caiping Wan, H. Xu, 2019, Materials Science Forum.

First Principles Calculation of Strain Effects on the Density of Interface States in 4H-SiC

Huiping Zhu, Caiping Wan, H. Xu, 2023, Journal of Crystal Growth.

Influence of curvature induced stress on first principle calculation and the reliability of 4H-SiC (0001) thermally grown SiO2 gate oxide

J. Ao, Huiping Zhu, Bo-Gang Li, 2019, Microelectronics Reliability.

The Influence to Uniform Current Distribution of SiC MOSFET Modules Based on the 3rd Quadrant Characteristics

Tianchun Ye, Yujie Du, Xizi Zhang, 2021 .

The Effect on the Interface and Reliability of SiC MOS by Ar/O2 Annealing

Zhi Jin, J. Xia, Caiping Wan, 2020 .

Simulation of Threshold Voltage Instability of 4H-SiC MOSFET

Mingmin Huang, Caiping Wan, H. Xu, 2023, Key Engineering Materials.