Guanqun Zhang

Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel

A. Song, Yiming Wang, Qian Xin, 2020, Semiconductor Science and Technology.

Effects of Atomic-Layer-Deposition Temperature on the Properties of Al2O3 Insulators and InAlZnO Thin-Film-Transistors with Dual-Active-Layer Structure

Xianjin Feng, Weidong Xu, Guanqun Zhang, 2021, Applied Surface Science.

Two-dimensional superconductivity at heterostructure of Mott insulating titanium sesquioxide and polar semiconductor

Lijie Wang, Z. An, Yan Chen, 2021 .

Room temperature fabricated high performance IAZO thin film transistors with dual-active-layer structure and sputtered Ta2O5 gate insulator

Xianjin Feng, Weidong Xu, Guanqun Zhang, 2020 .

Low–temperature fabrication of HfAlO alloy dielectric using atomic–layer deposition and its application in a low–power device

A. Song, Qian Xin, Pengfei Ma, 2019, Journal of Alloys and Compounds.