Sungwoo Choi

Characteristics of ZrO2 gate dielectric deposited using Zr t–butoxide and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method

C. Park, Yangdo Kim, H. Jeon, 2002 .

Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric

Yangdo Kim, H. Jeon, Jaehyoung Koo, 2004 .

Effects of an alternating field in field-aided lateral crystallization process for low temperature poly-silicon

D. Choi, C. K. Kim, S. Lee, 2006 .