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M. Sankaran
发表
Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride
J. Kanicki, A. Gelatos, M. S. Crowder, 1990 .
Influence of the Gate Bias and Temperature on Positive Charge Generation in TFT Gate-Quality Amorphous Silicon Nitride Films
J. Kanicki, M. Sankaran, 1991 .
The Generation and Bleaching of Positive Charge in Gate-Quality Nitrogen-Rich Amorphous Silicon Nitride By Sub-Bandgap Illumination
J. Kanicki, M. Sankaran, 1990 .