R. W. Hamaker

Channel Layer Surface Modifications in a-Si:II thin Film Transistors With Oxide/Nitride Dielectric Layers

G. Lucovsky, S. He, D. Stephens, 1992 .

High Channel Mobility a-Si:H Thin Film Transistors with Oxide/Nitride Dielectrics

G. Lucovsky, S. He, D. Stephens, 1992 .

Low Temperature Diffusion of Alkali Earth Cations in Thin, Vitreous SiO2 Films

K. Swartzel, C. K. Williams, J. O'sullivan, 1995 .

Degradation mechanism for silicon p+-n junctions under forward bias

R. W. Hamaker, Z. Putney, R. L. Ayers, 1981 .

Mechanism of Single‐Crystal Growth in InSb using Temperature‐Gradient Zone Melting

W. White, R. W. Hamaker, R. Hamaker, 1968 .