Y. Hata

Photoluminescence in Glow Discharge Deposited Amorphous Si1-xCx: H Films

Tatsuo Shimizu, A. Morimoto, I. Watanabe, 1982 .

Electrical characteristics and short-channel effect of c-axis aligned crystal indium gallium zinc oxide transistor with short channel length

Shunpei Yamazaki, Yoshiyuki Kobayashi, Daisuke Matsubayashi, 2014 .

Fabrication of dynamic oxide semiconductor random access memory with 3.9 fF storage capacitance and greater than 1 h retention by using c-axis aligned crystalline oxide semiconductor transistor with L of 60 nm

Shunpei Yamazaki, Yuto Yakubo, Takanori Matsuzaki, 2015 .

Effect of Surrounded-Channel Structure on Electrical Characteristics of $c$ -Axis Aligned Crystalline In–Ga–Zn–O Field-Effect Transistor

Shunpei Yamazaki, Yoshiyuki Kobayashi, Daisuke Matsubayashi, 2015, IEEE Electron Device Letters.

Scaling to 50-nm C-axis aligned crystalline In-Ga-Zn oxide FET with surrounded channel structure and its application for less-than-5-nsec writing speed memory

T. Yamamoto, Y. Kobayashi, Y. Yamamoto, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Highly aligned 2D NV ensemble fabrication from nitrogen-terminated (111) surface

H. Kawarada, S. Onoda, T. Tanii, 2021 .