Han Wang
发表
T. Lee,
Chuanghan Hsu,
M. Cao,
2022,
Advanced Materials Technologies.
I. Radu,
Zhihong Chen,
S. Liew,
2022,
ACS nano.
Zhihao Yu,
Xinran Wang,
Lain‐Jong Li,
2022,
Nature Communications.
W. Woon,
S. Vaziri,
Cheng‐Ming Lin,
2023,
IEEE Transactions on Electron Devices.
S. Liew,
K. Wei,
Chih-I Wu,
2023,
ACS Materials Letters.
H. Wong,
S. Mitra,
G. Pitner,
2022,
IEEE Electron Device Letters.
S. Liew,
Chao-Ching Cheng,
Wen‐Hao Chang,
2021,
2021 IEEE International Electron Devices Meeting (IEDM).
I. Radu,
Xiaofeng Qian,
W. Woon,
2023,
IEEE Transactions on Electron Devices.
First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length
I. Radu,
H. Philip Wong,
C. Chien,
2022,
International Electron Devices Meeting.
I. Radu,
Chao-Ching Cheng,
Lain‐Jong Li,
2022,
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
I. Radu,
G. Pitner,
Chao-Ching Cheng,
2022,
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
I. Radu,
Jing Guo,
Xiaofeng Qian,
2022,
2022 International Electron Devices Meeting (IEDM).