Mi Zhou

Superior thermal stability of Ta/TaN bi-layer structure for copper metallization

Qi Xie, X. Qu, Yu-Long Jiang, 2006 .

Improved barrier properties of ultrathin Ru film with TaN interlayer for copper metallization

Qi Xie, X. Qu, G. Ru, 2006 .

Investigation of Ni reaction with amorphous SiGeC thin film

X. Qu, Tao Chen, J. Tan, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Investigation of Ru/TaN on low dielectric constant material with k=2.7

Qi Xie, X. Qu, Yu-Long Jiang, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Cu contact on NiSi substrate with a Ta/TaN barrier stack

X. Qu, Yu-Long Jiang, Ran Liu, 2008 .

Study of ultrathin vanadium nitride as diffusion barrier for copper interconnect

Qi Xie, X. Qu, Tao Chen, 2006 .

ALD growth of Ru on RIE-pretreated TaN substrate

X. Qu, Tao Chen, G. Ru, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Reactively sputtered vanadium nitride as diffusion barrier for copper interconnect

X. Qu, G. Ru, Mi Zhou, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..