K. Makabe

Comprehensive TDDB lifetime prediction methodology for intrinsic and extrinsic failures in Cu interconnect dielectrics

T. Furusawa, E. Murakami, N. Suzumura, 2013 .

Cu-ion-migration phenomena and its influence on TDDB lifetime in Cu metallization

K. Makabe, J. Noguchi, K. Takeda, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Comprehensive lifetime prediction for intrinsic and extrinsic TDDB failures in Cu/Low-k interconnects

T. Ouchi, K. Makabe, E. Murakami, 2011, 2011 IEEE International Interconnect Technology Conference.

Modeling of Cu IMD-TDDB caused by extrinsic defects

T. Ouchi, K. Makabe, M. Ogasawara, 2010, 2010 IEEE International Reliability Physics Symposium.

A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics

K. Makabe, E. Murakami, N. Suzumura, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Low‐Cost p − / p − Epitaxial Silicon Wafers for Densely Packed Metal‐Oxide‐Semiconductor Devices

H. Shimizu, M. Miura, K. Makabe, 2000 .