Feng Zhang

发表

Study of morphology defects in 4H-SiC thick epitaxial layers grown on 4° off-axis Si-face substrates

G. Yan, Xingfang Liu, Wanshun Zhao, 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources

B. Liu, G. Yan, Xingfang Liu, 2013, Materials.

Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode

Zhanwei Shen, G. Yan, Xingfang Liu, 2021, 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Low leakage current and high unipolar current density in a 4H-SiC trench gate MOSFET with integrated Schottky barrier diode

Zhanwei Shen, G. Yan, Xingfang Liu, 2020, 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Simulation of a Short-Channel 4H-SiC UMOSFET with Buried p Epilayer for Low Oxide Electric Field and Switching Loss

S. Dimitrijev, Z. Wen, Zhanwei Shen, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates

Xingfang Liu, Wanshun Zhao, Guosheng Sun, 2015 .

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Zhanwei Shen, Jun Chen, Xingfang Liu, 2020 .

Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates

Xingfang Liu, Wanshun Zhao, Z. Wang, 2012 .

Atomic Layer Deposition of BiFeO3 Thin Films Using β-Diketonates and H2O

F. Zhang, B. Liu, G. Yan, 2013 .

High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET

F. Zhang, Z. Wen, Zhanwei Shen, 2020, IEEE Transactions on Electron Devices.

A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region

Z. Wen, Zhanwei Shen, G. Yan, 2017, IEEE Electron Device Letters.

Characterization of 4H—SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy

Xingfang Liu, Wanshun Zhao, Z. Wang, 2012 .

The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition

F. Zhang, Z. Wen, Zhanwei Shen, 2019, Materials Science in Semiconductor Processing.

Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC

B. Liu, Xingfang Liu, Wanshun Zhao, 2013 .

Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition*

F. Zhang, Zhanwei Shen, G. Yan, 2016 .

Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001) SiO2 interface

Liu Bin, F. Zhang, Xingfang Liu, 2013 .

Influence of H2 treatment on the surface morphology of SiC with different wafer orientation and doping

Zhanwei Shen, Xingfang Liu, Guosheng Sun, 2023, Journal of Crystal Growth.

Analysis and modeling of localized faceting on 4H‐SiC epilayer surfaces

Xingfang Liu, Z. Wang, Lin Dong, 2013 .

Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates

Xingfang Liu, Yan Guoguo, Lin Dong, 2013 .

Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

F. Zhang, Changzheng Sun, Xingfang Liu, 2015, Nanomaterials.

The thermal stability study and improvement of 4H-SiC ohmic contact

Lei Wang, B. Liu, Xingfang Liu, 2014 .

Improved efficiency of organic/inorganic hybrid near-infrared light upconverter by device optimization.

Feng Zhang, Yiyang Li, Xinbo Chu, 2012, ACS applied materials & interfaces.

Theoretical Calculation and Simulation for Microcantilevers Based on SiC Epitaxial Layers

Zhanwei Shen, Jun Chen, Yawei He, 2019, Materials Science Forum.

Investigation of Defect Levels of Al/Ti 4H-SiC Schottky structures by Deep Level Transient Spectroscopy

Zhanwei Shen, Yawei He, Xingfang Liu, 2019, 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Mapping of micropipes and downfalls on 4H-SiC epilayers by Candela optical surface analyzer

Xingfang Liu, Lin Dong, Liu Zheng, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates

Zhanwei Shen, Xingfang Liu, Wanshun Zhao, 2019, Materials Science Forum.

Optimized P-emitter doping for switching-off loss of superjunction 4H-SiC IGBTs

Zhanwei Shen, Xingfang Liu, Wanshun Zhao, 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling

Yawei He, Xingfang Liu, Wanshun Zhao, 2020 .

Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension

Lei Wang, F. Zhang, Z. Wen, 2019, Chinese Physics B.