D. Czolak

High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC

T. Ciuk, P. Kamiński, A. Dobrowolski, 2019, IEEE Transactions on Electron Devices.

New, epitaxial approach to SERS platform preparation – InP nanowires coated by an Au layer as a new, highly active, and stable SERS platform

A. Kudelski, J. Krajczewski, E. Dumiszewska, 2023, Applied Surface Science.

Determining the number of graphene layers based on Raman response of the SiC substrate

T. Ciuk, A. Dobrowolski, D. Czolak, 2021 .

Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H–SiC

M. Wójcik, T. Ciuk, P. Kamiński, 2021, Current Applied Physics.

Contamination-induced inhomogeneity of noise sources distribution in Al2O3-passivated quasi-free-standing graphene on 4H-SiC(0001)

A. Kolek, T. Ciuk, M. Wzorek, 2022, Physica E: Low-dimensional Systems and Nanostructures.