Huiwen Xue

发表

Schottky Barrier Rectifier Based on (100) β-Ga2O3 and its DC and AC Characteristics *These authors contributed equally to this work.

Ying Zhang, Wei Wang, Xutang Tao, 2018 .

Fast Switching $\beta$ -Ga2O3 Power MOSFET With a Trench-Gate Structure

Qi Liu, S. Long, Ming Liu, 2019, IEEE Electron Device Letters.

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

Ying Zhang, Xutang Tao, Hangbing Lv, 2018 .

Full-Color and Anti-Counterfeit Printings with All-Dielectric Chiral Metasurfaces

Cheng Lu, J. Niu, Lina Shi, 2023, Photonics.

An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

Ming Liu, S. Long, Ming Liu, 2018, Nanoscale Research Letters.

Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material

S. Long, Ming Liu, Yuan Qin, 2019, Journal of Semiconductors.

Schottky Barrier Rectifier Based on ( 100 ) β-Ga 2 O 3 and its DC and AC Characteristics C

S. Long, H. Lv, X. Tao, 2022 .

Schottky Barrier Rectifier Based on (100) $\beta$ -Ga2O3 and its DC and AC Characteristics

Qi Liu, S. Long, Wei Wang, 2018, IEEE Electron Device Letters.

C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3

Qi Liu, S. Long, H. Lv, 2018, AIP Advances.

High-Saturation Full-Color Printing with All-Dielectric Chiral Metasurfaces

Cheng Lu, J. Niu, Lina Shi, 2023, ACS Applied Optical Materials.