David J. Spry

发表

An Overview of Wide Bandgap SiC Sensor and Electronics Development at NASA Glenn Research Center

Gary W. Hunter, Liang-Yu Chen, Glenn M. Beheim, 2007 .

Experimental Study of Structural Materials for Prolonged Venus Surface Exploration Missions

Gary W. Hunter, Robert S. Okojie, David J. Spry, 2020 .

Invited) High Temperature Wireless Smart Sensor Technology Based on Silicon Carbide Electronics

Gary W. Hunter, George E. Ponchak, Roger D. Meredith, 2014 .

Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

Michael J. Krasowski, David J. Spry, Norman F. Prokop, 2017, IEEE Electron Device Letters.

An Overview of Relevant Technology Development for SiC-Based Gas Sensor Systems

Gary W. Hunter, Jingxiong Xu, David J. Spry, 2006 .

First-Order SPICE Modeling of Extreme-Temperature 4H-SiC JFET Integrated Circuits

Liang-Yu Chen, David J. Spry, Philip G. Neudeck, 2016 .

6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C

Glenn Beheim, Michael J. Krasowski, Roger D. Meredith, 2008 .

A High Frequency (HF) inductive power transfer circuit for high temperature applications using SiC Schottky diodes

George E. Ponchak, Jennifer L. Jordan, David J. Spry, 2018, 2018 IEEE Topical Conference on Wireless Sensors and Sensor Networks (WiSNet).

Feature Article Extreme temperature 6H-SiC JFET integrated circuit technology

Glenn Beheim, Mehran Mehregany, Michael J. Krasowski, 2009 .

Reliability assessment of Ti/TaSi2/Pt ohmic contacts on SiC after 1000 h at 600 °C

Robert S. Okojie, David J. Spry, Dorothy Lukco, 2002 .

Processing and Characterization of Thousand-Hour 500 °C Durable 4H-SiC JFET Integrated Circuits

Glenn Beheim, Michael J. Krasowski, Liang-Yu Chen, 2016 .

Extreme temperature 6H‐SiC JFET integrated circuit technology

Steven L. Garverick, Mehran Mehregany, Michael J. Krasowski, 2009 .

A Bondable Metallization Stack That Prevents Diffusion of Oxygen and Gold into Monolithically Integrated Circuits Operating Above 500°C

David J. Spry, Dorothy Lukco, 2011, Journal of Electronic Materials.

Stable Ti/TaSi 2 /Pt Ohmic Contacts on N-Type 6H-SiC Epilayer at 600°C in Air

Robert S. Okojie, David J. Spry, Carl Salupo, 2000 .

Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions

Gary W. Hunter, Roger D. Meredith, Philip G. Neudeck, 2019, IEEE Journal of the Electron Devices Society.

Electrical Performance of a High Temperature 32-I/O HTCC Alumina Package

Glenn Beheim, Gary W. Hunter, Liang-Yu Chen, 2016 .

SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C

Roger D. Meredith, Liang-Yu Chen, Glenn M. Beheim, 2007 .

4H-SiC JFET Multilayer Integrated Circuit Technologies Tested Up to 1000 K

Liang-Yu Chen, Glenn M. Beheim, David J. Spry, 2015 .

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

Glenn M. Beheim, Philip G. Neudeck, David J. Spry, 2016 .

Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

Gary W. Hunter, Roger D. Meredith, Liang-Yu Chen, 2016 .

Reaction Kinetics of Thermally Stable Contact Metallization on 6H-SiC

Robert S. Okojie, David J. Spry, Dorothy Lukco, 2000 .

Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 C

Michael J. Krasowski, Roger D. Meredith, Liang-Yu Chen, 2008 .

SiC Growth by Solvent-Laser Heated Floating Zone

Philip G. Neudeck, David J. Spry, Andrew J. Trunek, 2012 .

High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

George E. Ponchak, Michael J. Krasowski, Gary W. Hunter, 2012 .

Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C

Philip G. Neudeck, David J. Spry, P. Neudeck, 2016 .

Packaging Technologies for High Temperature Electronics and Sensors

Glenn Beheim, Gary W. Hunter, Roger D. Meredith, 2013 .

Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Michael J. Krasowski, Liang-Yu Chen, Glenn M. Beheim, 2016 .

Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy

Balaji Raghothamachar, Michael Dudley, Philip G. Neudeck, 2012 .

Electrical Performance of a 32-I/O HTCC Alumina Package for High-Temperature Microelectronics

Gary W. Hunter, Liang-Yu Chen, Glenn M. Beheim, 2017 .

Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

Glenn M. Beheim, Philip G. Neudeck, David J. Spry, 2016, IEEE Electron Device Letters.

Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient

Roger D. Meredith, Liang-Yu Chen, Glenn M. Beheim, 2008 .