D. Buchanan

Volatile and non-volatile memories in silicon with nano-crystal storage

Sandip Tiwari, Hussein I. Hanafi, Douglas A. Buchanan, 1995, Proceedings of International Electron Devices Meeting.

Experimental 0.1 mu m p-channel MOSFET with p/sup +/-polysilicon gate on 35 AA gate oxide

Y. Taur, T. Lii, D. Quinlan, 1993, IEEE Electron Device Letters.

High permittivity gate insulators TiO/sub 2/ and ZrO/sub 2/

C. Taylor, S. Campbell, T. Ma, 1999, Proceedings of the Thirteenth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.99CH36301).

High permittivity gate insulators TiO2 and ZrO2

S. Campbell, T. Ma, M. Gribelyuk, 1999 .

On the dark currents in germanium Schottky-barrier photodetectors

H. Card, D. Buchanan, 1982, IEEE Transactions on Electron Devices.

Electron effective mass in ultrathin oxide silicon MOSFET inversion layers

A. Fowler, D. Paul, M. Dragosavac, 2005 .