A. Campera

发表

Modelling and simulation of charging and discharging processes in nanocrystal flash memories during program and erase operations

G. Iannaccone, A. Campera, 2005, cond-mat/0509099.

Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks

C. Busseret, E. Langer, C. Fiegna, 2007, IEEE Transactions on Electron Devices.