W. Li

发表

Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol–gel-processed high-k HfAlOx gate dielectrics

G. He, J. Gao, M. Liu, 2017 .

Solution-processed HfGdO gate dielectric thin films for CMOS application: Effect of annealing temperature

G. He, S. Liang, S. Jiang, 2018 .

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

G. He, S. Liang, S. Jiang, 2017 .

Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics

M. Liu, S. Jiang, Z. Q. Sun, 2017, Journal of Sol-Gel Science and Technology.

Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics

G. He, J. Lv, J. Gao, 2016 .

Microstructure, optical and electrical properties of sputtered HfTiO high-k gate dielectric thin films

G. He, J. Lv, J. Gao, 2016 .

Modulation of electrical properties and current conduction mechanism of HfAlO/Ge gate stack by ALD-derived Al2O3 passivation layer

G. He, J. Gao, S. Jiang, 2017 .

Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation

G. He, J. Lv, J. Gao, 2017 .

Microstructure of the (100) and (111) facets of boron-doped diamonds under HPHT

S. Liu, J. Gong, W. Li, 2015 .

Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy

G. He, Zhaoqi Sun, S. Jiang, 2017 .

Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature

G. He, J. Lv, J. Gao, 2016 .

Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing

G. He, J. Lv, S. Liang, 2017 .

Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm−1

T. Margalith, J. Gao, Wenwen Li, 2018 .