O. Adetutu

The Influence of Selected Material and Transport Parameters on the Accuracy of Modeling Early Voltage in SiGe-Base HBT

D. Wristers, E. Luckowski, Asanga H. Perera, 2006 .

PVD TiN metal gate MOSFETs on bulk silicon and fully depleted silicon-on-insulator (FDSOI) substrates for deep sub-quarter micron CMOS technology

M. Mendicino, D. Jovanovic, O. Adetutu, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack

E. Luckowski, S. Kalpat, O. Adetutu, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

ALD HfO/sub 2/ using heavy water (D/sub 2/O) for improved MOSFET stability

S. Kalpat, O. Adetutu, L. Hebert, 2003, IEEE International Electron Devices Meeting 2003.